利博·(集团)有限公司官网

GENERAL DESCRIPTION

The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology.

FEATURES

? High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns

? Battery Backup: 2V data retention

? Low power standby

? High-performance, low-power CMOS process

? Single +5V (+10) Power Supply

? Easy memory expansion with CE1, CE2, and OE options.

? All inputs and outputs are TTL compatible