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CP592

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Small Signal Transistor PNP - Amp/Switch Transistor Chip

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PROCESS DETAILS

Process EPITAXIAL PLANAR

Die Size 12 x 20 MILS

Die Thickness 9.0 MILS

Base Bonding Pad Area 3.6 X 3.6 MILS

Emitter Bonding Pad Area 3.6 X 3.6 MILS

Top Side Metalization Al - 30,000?

Back Side Metalization Au - 18,000?

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    Small Signal Transistor PNP - Amp/Switch Transistor Chip

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