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? HIGH BVgd FOR 10V BIAS

? 0.3 X 1200 MICRON RECESSED ¡°MUSHROOM¡± GATE

? Si3N4 PASSIVATION

? ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY

? Idss SORTED IN 20mA PER BIN RANGE

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