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Description

The CNY17, CNY17F and MOC810X devices consist of a Gallium Arsenide IRED coupled with an NPN phototransistor in a dual in-line package.

Features

¡ö CNY171/2/3/4 and CNY17F1/2/3/4 are also available in

white package by specifying M suffix (eg. CNY17F2M)

¡ö UL recognized (File # E90700)

¡ö VDE recognized

¨C Add option V for white package (e.g., CNY17F2VM)

¨C File #102497

¨C Add option ¡®300¡¯ for black package (e.g., CNY17F2300)

¨C File #94766

¡ö Current transfer ratio in select groups

¡ö High BVCEO¡ª70V minimum (CNY17X/M, CNY17FX/M, MOC8106/7/8)

¡ö Closely matched current transfer ratio (CTR) minimizes unit

to-unit variation.

¡ö Very low coupled capacitance along with no chip to pin 6

base connection for minimum noise susceptability

(CNY17FX/M, MOC810X)

Applications

¡ö Power supply regulators

¡ö Digital logic inputs

¡ö Microprocessor inputs

¡ö Appliance sensor systems

¡ö Industrial controls