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FDA28N50F

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N-Channel MOSFET 500V, 28A, 0.175˻

MOSFET 500V 28A N-Channel

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Fairchild Semiconductor

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Description

These N-Channel enhancement mode power field effect transistors are produced using Failchild¡¯s proprietary, planar stripe, DMOS technology.

This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These device are well suited for high efficient switched mode power supplies and active power factor correction.

Features

? RDS(on) = 0.140? ( Typ.)@ VGS = 10V, ID = 14A

? Low Gate Charge ( Typ. 80nC)

? Low Crss ( Typ. 38pF)

? Fast Switching

? 100 Avalanche Tested

? Improved dv/dt Capability

? RoHS Compliant

FDA28N50F²úÆ·ÊôÐÔ

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    MOSFET 500V 28A N-Channel

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    STMicroelectronics

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    N-Channel

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    650 V

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    25 V

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    130 A µç×è¼³¼«/Ô´¼«

  • RDS£¨µ¼Í¨£©

    0.014 Ohms

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    Single

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    Through Hole

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    Max247

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    Tube

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