λÖãºFDA28N50F > FDA28N50FÏêÇé
FDA28N50FÖÐÎÄ×ÊÁÏ

³§¼ÒÐͺŠ| FDA28N50F |
Îļþ´óС | 541.16Kbytes |
Ò³ÃæÊýÁ¿ | 8Ò³ |
¹¦ÄÜÃèÊö | N-Channel MOSFET 500V, 28A, 0.175Àª MOSFET 500V 28A N-Channel |
Êý¾ÝÊÖ²á | |
Éú²ú³§ÉÌ | Fairchild Semiconductor |
¼ò³Æ | Fairchild¡¾ÏÉͯ°ëµ¼Ìå¡¿ |
ÖÐÎÄÃû³Æ | ·ÉÕ×/ÏÉͯ°ëµ¼Ì幫˾¹ÙÍø |
LOGO |
FDA28N50FÊý¾ÝÊÖ²á¹æ¸ñÊéPDFÏêÇé
Description
These N-Channel enhancement mode power field effect transistors are produced using Failchild¡¯s proprietary, planar stripe, DMOS technology.
This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These device are well suited for high efficient switched mode power supplies and active power factor correction.
Features
? RDS(on) = 0.140? ( Typ.)@ VGS = 10V, ID = 14A
? Low Gate Charge ( Typ. 80nC)
? Low Crss ( Typ. 38pF)
? Fast Switching
? 100 Avalanche Tested
? Improved dv/dt Capability
? RoHS Compliant
FDA28N50F²úÆ·ÊôÐÔ
- ÀàÐÍ
ÃèÊö
- ÐͺÅ
FDA28N50F
- ¹¦ÄÜÃèÊö
MOSFET 500V 28A N-Channel
- RoHS
·ñ
- ÖÆÔìÉÌ
STMicroelectronics
- ¾§Ìå¹Ü¼«ÐÔ
N-Channel
- ¼³¼«/Ô´¼«»÷´©µçѹ
650 V
- Õ¢/Ô´»÷´©µçѹ
25 V
- ©¼«Á¬ÐøµçÁ÷
130 A µç×è¼³¼«/Ô´¼«
- RDS£¨µ¼Í¨£©
0.014 Ohms
- ÅäÖÃ
Single
- °²×°·ç¸ñ
Through Hole
- ·â×°/ÏäÌå
Max247
- ·â×°
Tube
FDA28N50F¹©Ó¦ÉÌ...
¹©Ó¦ÉÌ | ÐͺŠ| Æ·ÅÆ | ÅúºÅ | ·â×° | ¿â´æ | ±¸×¢ | ¼Û¸ñ |
---|---|---|---|---|---|---|---|
ÉîÛÚÊÐÒ»Ïß°ëµ¼ÌåÓÐÏÞ¹«Ë¾ |
FDA28N50F |
Fairchild |
24+ |
TO-3PN |
24 |
||
ÉîÛÚÊÐÓÀ±´¶û¿Æ¼¼ÓÐÏÞ¹«Ë¾ |
FDA28N50F |
FAIRCHILD |
23+ |
NA |
19960 |
Ö»×ö½ø¿ÚÔ×°,Öն˹¤³§Ãâ·ÑËÍÑù |
|
ÉîÛÚÊлªË¹¶Ù¿Æ¼¼ÓÐÏÞ¹«Ë¾ |
FDA28N50F |
FAIRCHILD |
22+23+ |
TO-3P |
12747 |
¾ø¶ÔÔ×°ÕýƷȫнø¿ÚÉîÛÚÏÖ»õ |
|
ÉîÛÚÊÐÍú²Æ°ëµ¼ÌåÓÐÏÞ¹«Ë¾ |
FDA28N50F |
Fairchild |
23+ |
33500 |
|||
ÉîÛÚÊÐÈüÃÀ¿Æ¿Æ¼¼ÓÐÏÞ¹«Ë¾ |
FDA28N50F |
FAIRCHILD |
TO-3P |
9850 |
Ò»¼¶´úÀí Ô×°ÕýÆ·¼ÙÒ»·£Ê®¼Û¸ñÓÅÊƳ¤ÆÚ¹©»õ |
||
ÉîÛÚÊкê½Ý¼Ñµç×ӿƼ¼ÓÐÏÞ¹«Ë¾ |
FDA28N50F |
FAIRCHILD |
24+ |
TO-3PN3L |
12300 |
¶ÀÁ¢·ÖÏúÉÌ ¹«Ë¾Ö»×öÔ×° ³ÏÐľӪ Ãâ·ÑÊÔÑùÕýÆ·±£Ö¤ |
|
ÉîÛÚÊеýÝо³Ç¿Æ¼¼ÓÐÏÞ¹«Ë¾ |
FDA28N50F |
FAIRCHILD/ÏÉͯ |
23+ |
NA/ |
13818 |
ÓÅÊÆ´úÀíÇþµÀ,Ô×°ÕýÆ·,¿ÉȫϵÁж©»õ¿ªÔöֵ˰Ʊ |
|
ÉîÛÚÊÐÃÀ˼Èðµç×ӿƼ¼ÓÐÏÞ¹«Ë¾ |
FDA28N50F |
FAIRCHILD/ÏÉͯ |
22+ |
TO-3P |
12245 |
ÏÖ»õ,Ô³§Ô×°¼ÙÒ»·£Ê®! |
|
ÉîÛÚÊпƺãΰҵµç×ÓÓÐÏÞ¹«Ë¾ |
FDA28N50F |
FAIRCHILD½ø¿Ú |
1726+ |
TO-3P |
6528 |
Ö»×ö½ø¿ÚÔ×°ÕýÆ·ÏÖ»õ,¼ÙÒ»ÅâÊ®! |
|
ÉîÛÚÊÐÁèÐñ¿Æ¼¼ÓÐÏÞ¹«Ë¾ |
FDA28N50F |
FAIRCHILD/ÏÉͯ |
21+ |
TO-3P |
1709 |
FDA28N50F ¼Û¸ñ
²Î¿¼¼Û¸ñ£º£¤18.8461
FDA28N50F ×ÊÁÏÏÂÔظü¶à...
FDA28N50F ²úÆ·Ïà¹ØÐͺÅ
- FAN7318BM
- FAN73711MX
- FAN7387VN
- FAN7392M
- FCA22N60N
- FDU5N53TU
- MAAM-000070-004SMB
- MAAMSS0070TR-1000
- MAVR-001340
- MVDE100-24-P
- OPC1-1-WIDE
- OPC1-2-COL
- OPTL-3-WSL
- OPTX-3-008
- PWMRD-C1-CW-SP
- RTO-0W07-005
- XR16L788_08
- XR16M564IV64
- XR16M570
- XR16M570IL24
- XR16M580IL32
- XR16M598IQ100
- XR16M654
- XR16M654DIV64
- XR16M670
- XR16M670IB25
- XR16M670IL24
- XR16M670IL32
- XR16M681
- XR16M681IL32
DatasheetÊý¾Ý±íPDFÒ³ÂëË÷Òý
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
Fairchild Semiconductor ·ÉÕ×/ÏÉͯ°ëµ¼Ì幫˾
Fairchild SemiconductorÊÇÒ»¼ÒÔø¾´æÔڵİ뵼ÌåÖÆÔìÉÌ£¬×ܲ¿Î»ÓÚÃÀ¹ú¼ÓÖÝÊ¥¿ËÀÀ¡£Fairchild Semiconductor³ÉÁ¢ÓÚ1957Ä꣬ÊÇ×îÔçÆڵİ뵼Ì幫˾֮һ£¬×¨×¢ÓÚÉú²ú¸÷ÖÖ°ëµ¼ÌåÆ÷¼þ£¬°üÀ¨¾§Ìå¹Ü¡¢¼¯³Éµç·¡¢¹¦ÂÊÄ£¿éµÈ²úÆ·¡£ Fairchild SemiconductorÔÚ°ëµ¼ÌåÐÐÒµ¾ßÓÐÓƾõÄÀúÊ·ºÍ·á¸»µÄ¾Ñ飬Ôø¾ÊÇÈ«ÇòÁìÏȵİ뵼Ì幫˾֮һ£¬Æä²úÆ·±»¹ã·ºÓ¦ÓÃÓÚÏû·Ñµç×Ó¡¢Í¨ÐÅ¡¢¹¤Òµ¡¢Æû³µµÈÁìÓò¡£Fairchild SemiconductorÒÔÆ䴴еļ¼ÊõºÍ¸ßÐÔÄܵIJúÆ·¶øÎÅÃû£¬ÓµÓÐÖÚ¶àרÀûºÍ¼¼Êõ³É¹û¡£ 2016Ä꣬Fairchild Semiconductor±»ON