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    FDP6670S

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    30V N-Channel PowerTrench SyncFET

    MOSFET 30V N-Ch PowerTrench

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    Fairchild Semiconductor

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    FDP6670SÊý¾ÝÊÖ²á¹æ¸ñÊéPDFÏêÇé

    General Description

    This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDP6670S includes an integrated Schottky diode using Fairchild¡¯s monolithic SyncFET technology. The performance of the FDP6670S/FDB6670S as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDP6670A/FDB6670A in parallel with a Schottky diode.

    Features

    ? 31 A, 30 V. RDS(ON) = 8.5 m¦¸ @ VGS = 10 V RDS(ON) = 12.5 m¦¸ @ VGS = 4.5 V

    ? Includes SyncFET Schottky body diode

    ? Low gate charge (23nC typical)

    ? High performance trench technology for extremely low RDS(ON) and fast switching

    ? High power and current handling capability

    FDP6670S²úÆ·ÊôÐÔ

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      FDP6670S

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      MOSFET 30V N-Ch PowerTrench

    • RoHS

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      STMicroelectronics

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      N-Channel

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      650 V

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      25 V

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      130 A µç×è¼³¼«/Ô´¼«

    • RDS£¨µ¼Í¨£©

      0.014 Ohms

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      Single

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      Through Hole

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      Max247

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      Tube

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