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³§¼ÒÐͺŠ| FQB10N60C |
Îļþ´óС | 614.17Kbytes |
Ò³ÃæÊýÁ¿ | 9Ò³ |
¹¦ÄÜÃèÊö | 600V N-Channel MOSFET |
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Éú²ú³§ÉÌ | Fairchild Semiconductor |
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FQB10N60CÊý¾ÝÊÖ²á¹æ¸ñÊéPDFÏêÇé
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild¡¯s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Features
? 9.5A, 600V, RDS(on) = 0.73? @VGS = 10 V
? Low gate charge ( typical 44 nC)
? Low Crss ( typical 18 pF)
? Fast switching
? 100 avalanche tested
? Improved dv/dt capability
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Fairchild Semiconductor
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600V N-Channel MOSFET
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FQB10N60C ²úÆ·Ïà¹ØÐͺÅ
- 09062486833
- 09062486833222
- 09062486834222
- 1N3018BTR
- 1N3023BTR
- 1N3025BTR
- 1N3027BTR
- 1N3047ATR
- 1N3048ATR
- 1N3049ATR
- 2N4925
- 2N5934
- BS62LV1029DIP70
- CHF1.5KE130A
- CHF1.5KE180
- CHF1.5KE82A
- CHF1.5KE91
- EL5210CYZ
- FLI2301
- FRS300BA50
- GS9000
- GS9015ACTJ
- S-24C01ADPA-11-S
- S-24C01ADP-TB11-S
- S-24C01AFJA-11-S
- S-24C02ADP-11-S
- S-24C02ADPA-11-S
- SF_2N5148
- XC6203E422FB
- XC6203E512FB
DatasheetÊý¾Ý±íPDFÒ³ÂëË÷Òý
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Fairchild Semiconductor ·ÉÕ×/ÏÉͯ°ëµ¼Ì幫˾
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