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    200V LOGIC N-Channel MOSFET

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    Fairchild Semiconductor

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    General Description

    These N-Channel enhancement mode power field effect transistors are produced using Fairchild¡¯s proprietary, planar stripe, DMOS technology.

    This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply, motor control.

    Features

    ? 31A, 200V, RDS(on) = 0.075? @VGS = 10 V

    ? Low gate charge ( typical 55 nC)

    ? Low Crss ( typical 52 pF)

    ? Fast switching

    ? 100 avalanche tested

    ? Improved dv/dt capability

    ? Low level gate drive requirement allowing direct

    opration from logic drivers

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      Fairchild Semiconductor

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      200V LOGIC N-Channel MOSFET

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