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The HGT1S20N60B3S, the HGTP20N60B3 and the HGTG20N60B3 are Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25¡ãC and 150¡ãC.

Features

? 40A, 600V at TC = 25¡ãC

? 600V Switching SOA Capability

? Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150¡ãC

? Short Circuit Rated

? Low Conduction Loss

? Related Literature

- TB334 ¡°Guidelines for Soldering Surface Mount Components to PC Boards¡±