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¹¦ÄÜÃèÊö | 60A, 600V, UFS Series N-Channel IGBT IGBT ¾§Ìå¹Ü 600V N-Channel IGBT UFS Series |
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HGTG30N60B3Êý¾ÝÊÖ²á¹æ¸ñÊéPDFÏêÇé
The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25¡ãC and 150¡ãC.
Features
? 60A, 600V, TC = 25¡ãC
? 600V Switching SOA Capability
? Typical Fall Time. . . . . . . . . . . . . . . . . 90ns at TJ = 150¡ãC
? Short Circuit Rating
? Low Conduction Loss
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IGBT ¾§Ìå¹Ü 600V N-Channel IGBT UFS Series
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400 nA
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187 W
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HGTG30N60B3 ×ÊÁÏÏÂÔظü¶à...
HGTG30N60B3 ²úÆ·Ïà¹ØÐͺÅ
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- OR2T10A-7J84
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