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HGTG30N60B3

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60A, 600V, UFS Series N-Channel IGBT

IGBT ¾§Ìå¹Ü 600V N-Channel IGBT UFS Series

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Fairchild Semiconductor

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HGTG30N60B3Êý¾ÝÊÖ²á¹æ¸ñÊéPDFÏêÇé

The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25¡ãC and 150¡ãC.

Features

? 60A, 600V, TC = 25¡ãC

? 600V Switching SOA Capability

? Typical Fall Time. . . . . . . . . . . . . . . . . 90ns at TJ = 150¡ãC

? Short Circuit Rating

? Low Conduction Loss

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    IGBT ¾§Ìå¹Ü 600V N-Channel IGBT UFS Series

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    Fairchild Semiconductor

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    20 V ÔÚ25

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    150 A

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    400 nA

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    187 W

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HGTG30N60B3 ²úÆ·Ïà¹ØÐͺÅ

  • 4N38300W
  • H11A617300
  • H11A617B3SD
  • H11A617BW
  • H11A617C300W
  • H11A617D300W
  • H11A617DSD
  • H11D33SD
  • H11L1MSR2-M
  • H11L2MV-M
  • H11L3MSR2V
  • HGT1S10N120BNS
  • HGT1S12N60C3DS
  • HGT1S20N35G3VL
  • HGTG20N60B3D
  • HGTG20N60C3
  • HGTG27N120BN
  • HGTP10N120BN
  • HGTP20N35G3VL
  • HGTP7N60B3D
  • HLMP-0400
  • HLMP-0503
  • HLMP-3750A
  • MV3X50
  • OR2C10A-4PS84
  • OR2C10A-5M84
  • OR2C10A-5PS84
  • OR2T10A-2M84
  • OR2T10A-3J84
  • OR2T10A-7J84

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  • FANGJING
  • FANGTEK
  • fanhaiic
  • FANSO
  • Faraday
  • FCI
  • FCI-CONNECTOR
  • FEELING
  • FENGJUI
  • FERROXCUBE
  • FERYSTER

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