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¹¦ÄÜÃèÊö | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
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Éú²ú³§ÉÌ | Fairchild Semiconductor |
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General Description
These N -Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
Features
¡ö 1.7 A, 20 V. RDS(ON) = 0.14 ¦¸ @ VGS= 2.7 V
RDS(ON) = 0.11 ¦¸ @ VGS= 4.5 V.
¡ö Industry standard outline SOT-23 surface mount package using poprietary SuperSOTTM-3 design for superior thermal and electrical capabilities.
¡ö High density cell design for extremely low RDS(ON).
¡ö Exceptional on-resistance and maximum DC current capability.
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N-Channel Logic Level Enhancement Mode Field Effect Transistor
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SOT23-5 |
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Fairchild |
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SOT-23 |
200000 |
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FAIRCHILD |
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SOT23-3 |
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FAIRCHILD |
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2500 |
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