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SSP10N60ÖÐÎÄ×ÊÁÏ

³§¼ÒÐͺŠ| SSP10N60 |
Îļþ´óС | 909.24Kbytes |
Ò³ÃæÊýÁ¿ | 10Ò³ |
¹¦ÄÜÃèÊö | 600V N-Channel MOSFET Advanced Power MOSFET |
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Éú²ú³§ÉÌ | Fairchild Semiconductor |
¼ò³Æ | Fairchild¡¾ÏÉͯ°ëµ¼Ìå¡¿ |
ÖÐÎÄÃû³Æ | ·ÉÕ×/ÏÉͯ°ëµ¼Ì幫˾¹ÙÍø |
LOGO |
SSP10N60Êý¾ÝÊÖ²á¹æ¸ñÊéPDFÏêÇé
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild¡¯s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
Features
? 9.0A, 600V, RDS(on) = 0.8? @VGS = 10 V
? Low gate charge ( typical 54 nC)
? Low Crss ( typical 32 pF)
? Fast switching
? 100 avalanche tested
? Improved dv/dt capability
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Fairchild Semiconductor
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Advanced Power MOSFET
SSP10N60¹©Ó¦ÉÌ...
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SSP10N60B |
FAIRCHILD/ÏÉͯ |
24+ |
TO-220-3 |
3580 |
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SSP10N60A |
FAIRCHILD/ÏÉͯ |
24+ |
TO 220 |
155569 |
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ÉîÛÚÊÐÓÀ±´¶û¿Æ¼¼ÓÐÏÞ¹«Ë¾ |
SSP10N60 |
FAIRCHILD |
23+ |
NA |
19960 |
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SSP10N60 |
FAIRCHILD/ÏÉͯ |
2022+ |
TO-220 |
12888 |
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SSP10N60 |
FAIRCHILD/ÏÉͯ |
23+ |
11200 |
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FAIRCHILD/ÏÉͯ |
21+ |
TO-220 |
10000 |
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SSP10N60B |
FAIRCHILD/ÏÉͯ |
01+ |
TO-220-3 |
25 |
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SSP10N60B |
FAIRCHILD/ÏÉͯ |
2023+ |
TO-220-3 |
50000 |
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SSP10N80C |
FAIRCHILD |
24+ |
TO-TO-220 |
12300 |
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SSP10N60 |
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23+ |
TO-220 |
69820 |
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SSP10N60 ×ÊÁÏÏÂÔظü¶à...
SSP10N60 ²úÆ·Ïà¹ØÐͺÅ
- OR2C12A-3T352I
- OR2C12A-7T352I
- OR2C15A-3M84
- OR2C15A-4M84
- OR2C15A-6BA84
- OR2T12A-3T352I
- OR2T12A-6S352I
- OR2T15A-2BC84
- OR2T15A-6J84
- S9014
- SMCJ150CA
- SMCJ51CA
- SMCJ90CA
- SPT7871
- SPT7935
- SPT9713
- SPT9713BIP
- SS17
- SS9013D
- SSH7N60
- SSI4N60B
- SSP4N60B
- SSTV16857MTD
- SSW10N60B
- SSW1N50B
- SSW2N60B
- TDA2002
- TIP105
- TIP141F
- TIP142
DatasheetÊý¾Ý±íPDFÒ³ÂëË÷Òý
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Fairchild Semiconductor ·ÉÕ×/ÏÉͯ°ëµ¼Ì幫˾
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