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SSP10N60

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600V N-Channel MOSFET

Advanced Power MOSFET

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Fairchild Semiconductor

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General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild¡¯s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.

Features

? 9.0A, 600V, RDS(on) = 0.8? @VGS = 10 V

? Low gate charge ( typical 54 nC)

? Low Crss ( typical 32 pF)

? Fast switching

? 100 avalanche tested

? Improved dv/dt capability

SSP10N60²úÆ·ÊôÐÔ

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    SSP10N60

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    FAIRCHILD

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    Fairchild Semiconductor

  • ¹¦ÄÜÃèÊö

    Advanced Power MOSFET

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3580
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SSP10N60 ²úÆ·Ïà¹ØÐͺÅ

  • OR2C12A-3T352I
  • OR2C12A-7T352I
  • OR2C15A-3M84
  • OR2C15A-4M84
  • OR2C15A-6BA84
  • OR2T12A-3T352I
  • OR2T12A-6S352I
  • OR2T15A-2BC84
  • OR2T15A-6J84
  • S9014
  • SMCJ150CA
  • SMCJ51CA
  • SMCJ90CA
  • SPT7871
  • SPT7935
  • SPT9713
  • SPT9713BIP
  • SS17
  • SS9013D
  • SSH7N60
  • SSI4N60B
  • SSP4N60B
  • SSTV16857MTD
  • SSW10N60B
  • SSW1N50B
  • SSW2N60B
  • TDA2002
  • TIP105
  • TIP141F
  • TIP142

FairchildÏà¹Øµç·ͼ

  • FAIR-RITE
  • FANGJING
  • FANGTEK
  • fanhaiic
  • FANSO
  • Faraday
  • FCI
  • FCI-CONNECTOR
  • FEELING
  • FENGJUI
  • FERROXCUBE
  • FERYSTER

Fairchild Semiconductor ·ÉÕ×/ÏÉͯ°ëµ¼Ì幫˾

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