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¹¦ÄÜÃèÊö | RF Power Field Effect Transistors MOSFET N-CHAN 85W 26V NI-78O |
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MRF18085BLR3Êý¾ÝÊÖ²á¹æ¸ñÊéPDFÏêÇé
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications.
? GSM and GSM EDGE Performance, Full Frequency Band (1930 - 1990 MHz)
Power Gain - 12.5 dB (Typ) @ 85 Watts CW
Efficiency - 50 (Typ) @ 85 Watts CW
? Capable of Handling 5:1 VSWR, @ 26 Vdc, 1960 MHz, 85 Watts CW Output Power
Features
? Internally Matched for Ease of Use
? High Gain, High Efficiency, and High Linearity
? Integrated ESD Protection
? Designed for Maximum Gain and Insertion Phase Flatness
? Excellent Thermal Stability
? Characterized with Series Equivalent Large-Signal Impedance Parameters
? Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40¦Ì¡å Nominal.
? RoHS Compliant
? In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
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MRF18085BLR3 ²úÆ·Ïà¹ØÐͺÅ
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- XC6204H46APR
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