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RF Power Field Effect Transistors N- Channel Enhancement-Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, common- source amplifier applications in 26 volt base station equipment.

? Typical Performance at 945 MHz, 26 Volts Output Power ó 30 Watts PEP

Power Gain - 20 dB

Efficiency - 41 (Two Tones)

IMD - - 31 dBc

? Integrated ESD Protection

? Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW Output Power

Features

? Excellent Thermal Stability

? Characterized with Series Equivalent Large- Signal Impedance Parameters

? Dual- Lead Boltdown Plastic Package Can Also Be Used As Surface Mount.

? 200C Capable Plastic Package

? N Suffix Indicates Lead- Free Terminations. RoHS Compliant.

? TO- 272- 2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

? TO- 270- 2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.