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¹¦ÄÜÃèÊö | Silicon N-Channel MOS FET Silicon N Channel MOS FET |
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Features
? Low on-resistance.
? RDS(on) = 2.6 max. (at V GS = 4 V, ID = 100mA)
? 2.5V gate drive device.
? Small package (MPAK).
Application
Low frequency power switching
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Silicon N Channel MOS FET
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