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    2SK2569

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    Silicon N-Channel MOS FET

    Silicon N Channel MOS FET

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    Hitachi Semiconductor

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    2SK2569Êý¾ÝÊÖ²á¹æ¸ñÊéPDFÏêÇé

    Features

    ? Low on-resistance.

    ? RDS(on) = 2.6 max. (at V GS = 4 V, ID = 100mA)

    ? 2.5V gate drive device.

    ? Small package (MPAK).

    Application

    Low frequency power switching

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      Renesas Technology Corp

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      Silicon N Channel MOS FET

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