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2SK3080

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Silicon N Channel MOS FET High Speed Power Switching

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Hitachi Semiconductor

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2SK3080Êý¾ÝÊÖ²á¹æ¸ñÊéPDFÏêÇé

Features

? Low on-resistance

RDS(on) = 20 m? typ. (VGS = 10V, ID = 15 A)

? 4V gate drive devices.

? High speed switching

2SK3080¹©Ó¦ÉÌ...

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