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BB501C

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Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

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Hitachi Semiconductor

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Features

? Build in Biasing Circuit; To reduce using parts cost & PC board space.

? High gain; PG = 21.5 dB typ. at f = 900 MHz

? Low noise; NF = 1.85 dB typ. at f = 900 MHz

? Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.

? Provide mini mold packages; CMPAK-4(SOT-343mod)

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    Hitachi Semiconductor

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    Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

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BB501C ²úÆ·Ïà¹ØÐͺÅ

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  • HA12170NT
  • HA12197F
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  • HA12206NT
  • HA12222F
  • HA12226
  • HA12226F
  • HA12228F
  • HA12229F
  • HA13456AMP
  • HA13536F
  • HA13561
  • HA13563

HitachiÏà¹Øµç·ͼ

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  • HITRON
  • Hittite
  • HMS
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  • HOKURIKU
  • HOLLINGSWORTH
  • Holtek
  • HOLTIC
  • HOLYSTONECAPS
  • Honeywell

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