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Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Built in Biasing Circuit MOS FET IC UHF RF Amplifier

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Hitachi Semiconductor

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Features

? Build in Biasing Circuit; To reduce using parts cost & PC board space.

? Low noise; NF = 1.8 dB typ. at f = 900 MHz

? High gain; PG = 22 dB typ. at f = 900 MHz

? Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.

? Provide mini mold packages; CMPAK-4(SOT-343mod)

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    Renesas Technology Corp

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    Built in Biasing Circuit MOS FET IC UHF RF Amplifier

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HITACHI
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SOT143
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BB503C ²úÆ·Ïà¹ØÐͺÅ

  • 3SK319
  • 4AC14
  • 4AK18
  • 4AK23
  • BB102M
  • BB301C
  • BB501
  • E28F004B5T80
  • HA11235
  • HA12142NT
  • HA12157NT
  • HA12198F
  • HA12204NT
  • HA12207NT
  • HA13456A
  • HA16103FPK
  • HA16114FPJ
  • HA16117FPA
  • HA16121FP
  • HA16664AFP
  • HA17384
  • HA17451AP
  • HA17904FPK
  • HLMP-1421-MS000
  • IDT54FCT244CE
  • IDT54FCT2648ATSO
  • IDT7204S80D
  • IDT742541DTD
  • IDT74FCT166245CTE
  • TE28F020-150

HitachiÏà¹Øµç·ͼ

  • HITACHI-METALS
  • HITANO
  • HITRON
  • Hittite
  • HMS
  • HMSEMI
  • HOKURIKU
  • HOLLINGSWORTH
  • Holtek
  • HOLTIC
  • HOLYSTONECAPS
  • Honeywell

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