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DESCRIPTION

The IC42S16160 are high-speed 256M-bits synchronous dynamic random-access memories, organized as 4M x 16 x 4 (word x bit x bank), respectively.

FEATURES

? Single 3.3V (± 0.3V) power supply

? High speed clock cycle time -6: 166MHz, -7: 133MHz

? Fully synchronous operation referenced to clock rising edge

? Possible to assert random column access in every cycle

? Quad internal banks contorlled by BA0 & BA1 (Bank Select)

? Byte control by LDQM and UDQM for IC42S16160

? Programmable Wrap sequence (Sequential / Interleave)

? Programmable burst length (1, 2, 4, 8 and full page)

? Programmable CAS latency (2 and 3)

? Automatic precharge and controlled precharge

? CBR (Auto) refresh and self refresh

? LVTTL compatible inputs and outputs

? 8,192refresh cycles / 64ms

? Burst termination by Burst stop and Precharge command

? Package 400mil 54-pin TSOP-2