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¹¦ÄÜÃèÊö | OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) MOSFET N-KANAL POWER MOS |
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Éú²ú³§ÉÌ | Infineon Technologies AG |
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Features
? N-channel, normal level
? Excellent gate charge x R DS(on) product (FOM)
? Very low on-resistance R DS(on)
? 175 ¡ãC operating temperature
? Pb-free lead plating; RoHS compliant; Halogen free
? Qualified according to JEDEC1) for target application
? Ideal for high-frequency switching and synchronous rectification
? Halogen-free according to IEC61249-2-21
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- IP49K
- IP57
- IP58
- IPA050N10NM5S
- IPA052N08NM5S
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- IPBS-102-01-T-D-GP
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- IPBS-103-01-T-S-GP
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