Àû²©¡¤(¼¯ÍÅ)ÓÐÏÞ¹«Ë¾¹ÙÍø

The 1.8 Volt Intel StrataFlash? wireless memory with 3-Volt I/O product is the latest generation of Intel StrataFlash? memory devices featuring flexible, multiple-partition, dual operation. It provides high performance synchronous-burst read mode and asynchronous read mode using 1.8 volt low-voltage, multilevel cell (MLC) technology.

¡ö High performance Read-While-Write/Erase

¡ª 85 ns initial access

¡ª 52MHz with zero wait state, 17 ns clock-to-data

output synchronous-burst mode

¡ª 25 ns asynchronous-page mode

¡ª 4-, 8-, 16-, and continuous-word burst mode

¡ª Burst suspend

¡ª Programmable WAIT configuration

¡ª Buffered Enhanced Factory Programming

(Buffered EFP): 3.5 ?s/byte (Typ)

¡ª 1.8 V low-power buffered and non-buffered

programming @ 10 ?s/byte (Typ)

¡ö Architecture

¡ª Asymmetrically-blocked architecture

¡ª Multiple 8-Mbit partitions: 64Mb and 128Mb

devices

¡ª Multiple 16-Mbit partitions: 256Mb devices

¡ª Four 16-KWord parameter blocks: top or

bottom configurations

¡ª 64K-Word main blocks

¡ª Dual-operation: Read-While-Write (RWW) or

Read-While-Erase (RWE)

¡ª Status register for partition and device status

¡ö Power

¡ª 1.7 V - 2.0 V VCC operation

¡ª I/O voltage: 2.2 V - 3.3 V

¡ª Standby current: 30 ?A (Typ)

¡ª 4-Word synchronous read current: 17 mA (Typ) @ 54 MHz

¡ª Automatic Power Savings (APS) mode