λÖãºSTD11NM60ND > STD11NM60NDÏêÇé
STD11NM60NDÖÐÎÄ×ÊÁÏ

³§¼ÒÐͺŠ| STD11NM60ND |
Îļþ´óС | 324.69Kbytes |
Ò³ÃæÊýÁ¿ | 2Ò³ |
¹¦ÄÜÃèÊö | isc N-Channel MOSFET Transistor MOSFET N-channel 600V, 10A FDMesh II |
Êý¾ÝÊÖ²á | |
Éú²ú³§ÉÌ | Inchange Semiconductor Company Limited |
¼ò³Æ | ISC¡¾ÎÞÎý¹Ìµç¡¿ |
ÖÐÎÄÃû³Æ | ÎÞÎý¹Ìµç°ëµ¼Ìå¹É·ÝÓÐÏÞ¹«Ë¾¹ÙÍø |
LOGO |
STD11NM60ND²úÆ·ÊôÐÔ
- ÀàÐÍ
ÃèÊö
- ÐͺÅ
STD11NM60ND
- ¹¦ÄÜÃèÊö
MOSFET N-channel 600V, 10A FDMesh II
- RoHS
·ñ
- ÖÆÔìÉÌ
STMicroelectronics
- ¾§Ìå¹Ü¼«ÐÔ
N-Channel
- ¼³¼«/Ô´¼«»÷´©µçѹ
650 V
- Õ¢/Ô´»÷´©µçѹ
25 V
- ©¼«Á¬ÐøµçÁ÷
130 A µç×è¼³¼«/Ô´¼«
- RDS£¨µ¼Í¨£©
0.014 Ohms
- ÅäÖÃ
Single
- °²×°·ç¸ñ
Through Hole
- ·â×°/ÏäÌå
Max247
- ·â×°
Tube
STD11NM60ND¹©Ó¦ÉÌ...
¹©Ó¦ÉÌ | ÐͺŠ| Æ·ÅÆ | ÅúºÅ | ·â×° | ¿â´æ | ±¸×¢ | ¼Û¸ñ |
---|---|---|---|---|---|---|---|
ÉîÛÚÊаºÐ¾Î¢¿Æ¼¼ÓÐÏÞ¹«Ë¾ |
STD11NM60ND |
ST |
23+ |
14PBF |
6996 |
Ö»×öÔ×°ÕýÆ·ÏÖ»õ |
|
ÉîÛÚÊÐÃ÷¼ÎÀ³¿Æ¼¼ÓÐÏÞ¹«Ë¾ |
STD11NM60ND |
STMicroelectronics Asia Pacifi |
25+ |
SMD |
918000 |
Ã÷¼ÎÀ³Ö»×öÔ×°ÕýÆ·ÏÖ»õ |
|
ÆâºÅо³Çµç×ÓÉÌÎñ(ÉîÛÚ)ÓÐÏÞ¹«Ë¾ |
STD11NM60ND |
ST |
2024+ |
N/A |
70000 |
ÆâºÅÖ»×öÔ×° ÏÖ»õ¼ÛÃëɱȫÍø |
|
ÉîÛÚÊÐÒ»Ïß°ëµ¼ÌåÓÐÏÞ¹«Ë¾ |
STD11NM60ND |
ST |
24+ |
TO252DPAK |
8866 |
||
ÉîÛÚÊв©ºÆͨ¿Æ¼¼ÓÐÏÞ¹«Ë¾ |
STD11NM60ND |
STMicro. |
23+ |
D2PAK |
7750 |
È«ÐÂÔ×°ÓÅÊÆ |
|
ÉîÛÚÊк£Ììºèµç×ӿƼ¼ÓÐÏÞ¹«Ë¾ |
STD11NM60ND |
ST |
1650+ |
? |
14860 |
Ö»×öÔ×°½ø¿Ú,¼ÙÒ»·£Ê® |
|
ÉîÛÚÊпƺãΰҵµç×ÓÓÐÏÞ¹«Ë¾ |
STD11NM60ND |
ST |
2018+ |
TO252 |
6528 |
Ö»×öÔ×°ÕýÆ·¼ÙÒ»ÅâÊ®!Ö»ÒªÍøÉÏÓÐÉÏ°Ù·Ö°ÙÓпâ´æ·ÅÐÄ |
|
ÉîÛÚÊÐÈüоԴ¿Æ¼¼ÓÐÏÞ¹«Ë¾ |
STD11NM60ND |
ST |
18+ |
TO-252 |
41200 |
Ô×°ÕýÆ·,ÏÖ»õÌØ¼Û |
|
ÉîÛÚÊÐÄÉ°¬Ë¹¿Æ¼¼ÓÐÏÞ¹«Ë¾ |
STD11NM60ND |
ST |
2020+ |
TO252 |
80000 |
Ö»×ö×Ô¼º¿â´æ,È«ÐÂÔ×°½ø¿ÚÕýÆ·¼ÙÒ»Åâ°Ù,¿É¿ª13%Ôö |
|
ÉîÛÚÊбóÌÚ´ï¿Æ¼¼ÓÐÏÞ¹«Ë¾ |
STD11NM60ND |
STMicroelectronics |
21+ |
DPAK |
2500 |
100%½ø¿ÚÔ×°!³¤ÆÚ¹©Ó¦!¾ø¶ÔÓÅÊƼ۸ñ(³ÏОӪ)! |
STD11NM60ND ¼Û¸ñ
²Î¿¼¼Û¸ñ£º£¤8.0012
STD11NM60ND ×ÊÁÏÏÂÔظü¶à...
STD11NM60ND ²úÆ·Ïà¹ØÐͺÅ
- 0804549
- A3BK
- AQV22
- BLM21BD221SZ1
- BLM21BD221SZ1_V01
- BLM21BD221SZ1B
- BLM21BD221SZ1D
- BLM21BD221SZ1J
- CMF3.1113.12
- CX2900-0038
- DA22_V01
- FFVE4C0187K--
- FFVE4C0187K7X
- FFVE4C0187KJ7
- FFVE4C0187KJE
- LPE3325ER332NU
- M4M
- MH1608-300Y
- MH1608-301T
- MH1608-301Y
- SMLJ90CA
- TCAL500-35F
- TCAL500-35M
- TCAL500-35MF
- TCAL500-NF
- TCAL500-NM
DatasheetÊý¾Ý±íPDFÒ³ÂëË÷Òý
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
Inchange Semiconductor Company Limited ÎÞÎý¹Ìµç°ëµ¼Ìå¹É·ÝÓÐÏÞ¹«Ë¾
ÎÞÎý¹Ìµç°ëµ¼Ìå¹É·ÝÓÐÏÞ¹«Ë¾isc³ÉÁ¢ÓÚ1991Ä꣬³¤ÆÚÖÂÁ¦ÓÚ¹¦ÂÊ°ëµ¼ÌåÆ÷¼þ¹ú²ú»¯Ìæ´ú½ø¿Ú£¬ÓµÓÐiscºÍiscsemiÁ½¸öÆ·ÅÆ£¬»ñµÃIATF16949¡¢ISO 9001¡¢RoHS¡¢REACHÈÏÖ¤¡£ ÎÒÃÇ×ÔÖ÷Ñз¢Éú²ú¹¦ÂÊ°ëµ¼Ìå²úÆ·ÓÐ32ÄêµÄ»ýÀÛ£¬ÌṩµÄ²úÆ·°üÀ¨MOSFET¡¢IGBT¡¢SiC¶þ¼«¹Ü¡¢SiC MOSFET¡¢Ë«¼«Ð;§Ìå¹ÜBJT¡¢¿É¿Ø¹è¡¢¶þ¼«¹ÜÒÔ¼°¸÷ÖÖÄ£¿é£¬²¢¿É¸ù¾Ý¹Ë¿ÍÒªÇóÉè¼Æ¡¢¶¨ÖÆÌØÊâ²úÆ·¡£ ÎÒÃǵŦÂÊ°ëµ¼Ìå²úÆ·Ó¦ÓÃÓÚÆû³µµç×Ó¡¢ÐÂÄÜÔ´¡¢±äƵÆ÷¡¢µçÁ¦ÉèÊ©¡¢´¢ÄÜÉ豸¡¢¹ìµÀ½»Í¨¡¢¹¤Òµ¿ØÖÆϵͳ¡¢Ò½ÁÆÉ豸¡¢ÒôÏ칦·Å¡¢¼ÒÓõçÆ÷µÈÁìÓò¡£ ÎÒÃÇ»¹Éú²ú¹©Ó¦ÒÑÍ£²ú¡¢ÄÑÒÔÕÒµ½¡¢ÀäÃÅ¡¢Öð½¥Î®ËõµÄ²úÆ·£¬Í¬Ê±Ò²ÏúÊÛ