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OVERVIEW

IXYS extends its GenX3? insulated gate bipolar transistor (IGBT) product line to 600 volts. These new IGBTs are manufactured using IXYS¡¯ state-of-the-art GenX3? IGBT process and utilize IXYS¡¯ advanced Punch-Though (PT) technology, tailored to provide higher surge current capabilities, lower saturation voltages, and lower switching losses.

To accommodate optimum part selection, designers have a choice in selecting between three sub-classes denoted A3, B3, and C3. These classifications allow designers to ¡°dial in¡± the best compromise between static (conduction) and dynamic (switching) losses, improving over-all system efficiency in a variety of power conversion applications by balancing critical requirements such as switching frequency, efficiency, and cost structure. The A3-Class are optimized for low saturation voltage V(sat) and are well suited for applications requiring switching frequencies up to 5kHz. Similarly, the B3-Class offers low saturation voltages, but is optimized to accommodate applications that require ¡°medium speed¡± switching operation from 5kHz to 40kHz. The C3-Class is optimized for ¡°high speed¡± switching operation from 40kHz to 100kHz and resonant switching operation of up to 400kHz.