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M29W160FBB80N3F中文资料
M29W160FBB80N3F数据手册规格书PDF详情
Description
The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V for access time of 80 ns and 70 ns, respectively). On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.
The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Each block can be protected independently to prevent accidental Program or Erase commands from modifying the memory. Program and Erase commands are written to the command interface of the memory. An on-chip Program/Erase controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents.
The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.
Features
■ Supply voltage
– VCC = 2.5 V to 3.6 V (access time: 80 ns) or 2.7 to 3.6 V (access time: 70 ns) for Program, Erase and Read
– VPP = 12 V for Fast Program (optional, available in the M29W320FT/B only)
■ Access time: 70, 80 ns
■ Programming time
– 10 ?s per byte/word typical
■ Memory organization:
– M29W160FT/B: 35 blocks including 1 boot block (top or bottom location), 2 parameter blocks and 32 main blocks
– M29W320FT: 67 blocks including 1 boot block (top or bottom location), 2 parameter blocks and 64 main blocks
■ Program/Erase controller
– Embedded byte/word program algorithms
■ Erase Suspend and Resume modes
– Read and Program another block during Erase Suspend
■ Unlock Bypass Program command
– Faster production/batch programming
■ VPP/WP pin for Fast program and Write Protect (available in the M29W320FT/B only)
■ Temporary block unprotection mode
■ Common Flash interface
– 64 bit security code
■ Low power consumption
– Standby and Automatic Standby
■ 100,000 Program/Erase cycles per block
■ Electronic signature
– Manufacturer code: 0020h
– Top device codes
M29W160FT: 22C4h
M29W320FT: 22CAh
– Bottom device codes
M29W160FB: 2249h
M29W320FB: 22CBh
■ Automotive device grade 3:
– Temperature: –40 to 125 °C
– Automotive grade certified
■ TSOP48 package is ECOPACK?
M29W160FBB80N3F产品属性
- 类型
描述
- 型号
M29W160FBB80N3F
- 制造商
NUMONYX
- 制造商全称
Numonyx B.V
- 功能描述
16 Mbit or 32 Mbit(x 8 or x 16, boot block) 3 V supply Flash memory
M29W160FBB80N3F供应商...
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
深圳市科恒伟业电子有限公司 |
M29W160FT70N3F |
NUMONYX |
2016+ |
TSOP |
6528 |
只做原厂原装现货!终端客户个别型号可以免费送样品! |
|
深圳市华斯顿科技有限公司 |
M29W160FT70N3E |
Numonyx |
22+23+ |
TSOP48 |
55498 |
绝对原装正品现货,全新深圳原装进口现货 |
|
深圳市英卓尔科技有限公司 |
M29W160FT70N3E |
NUMONYX/ST |
20+ |
TSOP14 |
2960 |
诚信交易大量库存现货 |
|
深圳市兴灿科技有限公司 |
M29W160FT70N3E |
NUYX |
24+ |
48TSOP |
28500 |
授权代理直销,原厂原装现货,假一罚十,特价销售 |
|
兆亿微波(北京)科技有限公司 |
M29W160FT70N3E |
Micron |
200 |
||||
深圳市中福国际管理有限公司 |
M29W160FSB70ZA6 |
ST |
21+ |
BGA |
23480 |
||
深圳市一线半导体有限公司 |
M29W160FT70N3E |
NUM |
24+ |
768 |
|||
瀚佳科技(深圳)有限公司 |
M29W160FT70N3FTR |
Micron Technology Inc. |
24+ |
48-TSOP |
56200 |
一级代理/放心采购 |
|
深圳市科雨电子有限公司 |
M29W160FT70N3FTR |
MICRON |
20+ |
TSOP-48 |
1001 |
就找我吧!--邀您体验愉快问购元件! |
|
深圳市河锋鑫科技有限公司 |
M29W160FT70N3FTR |
Micron |
22+ |
48TSOP |
9000 |
原厂渠道,现货配单 |
M29W160FBB80N3F 资料下载更多...
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numonyx
Numonyx是一家曾经存在的存储技术公司,于2008年由英特尔(Intel)和STMicroelectronics共同创立。Numonyx专注于非易失性存储器(NVM)技术和闪存存储器技术,为客户提供各种存储解决方案和产品。 Numonyx的产品包括闪存存储器、嵌入式存储器、非易失性存储器等,在计算机、消费电子、通信、汽车等领域得到广泛应用。公司致力于技术创新与研发,不断提升产品性能、可靠性和创新性,以满足客户不断增长的需求。 2010年,美国存储技术公司Micron Technology收购了Numonyx,并将其整合为Micron的一部分。这一收购使Micron得以拓展其存储技术领域的产