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    NAND512R4A2CN6E中文资料

    厂家型号

    NAND512R4A2CN6E

    文件大小

    1270.65Kbytes

    页面数量

    51

    功能描述

    512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

    数据手册

    下载地址一下载地址二

    生产厂商

    numonyx

    简称

    NUMONYX

    中文名称

    官网

    LOGO

    NAND512R4A2CN6E数据手册规格书PDF详情

    Description

    The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that

    uses the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page

    family. The NAND512R3A2C, NAND512R4A2C, NAND512W3A2C, and NAND512W4A2C

    have a density of 512 Mbits and operate with either a 1.8V or 3V voltage supply. The size of

    a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on

    whether the device has a x8 or x16 bus width.

    The address lines are multiplexed with the Data Input/Output signals on a multiplexed x8 or

    x16 Input/Output bus. This interface reduces the pin count and makes it possible to migrate

    to other densities without changing the footprint.

    To extend the lifetime of NAND Flash devices it is strongly recommended to implement an

    Error Correction Code (ECC). The use of ECC correction allows to achieve up to 100,000

    program/erase cycles for each block. A Write Protect pin is available to give a hardware

    protection against program and erase operations.

    Features

    ● High density NAND Flash memories

    – 512 Mbit memory array

    – Cost effective solutions for mass storage applications

    ● NAND interface

    – x 8 or x 16 bus width

    – Multiplexed Address/ Data

    ● Supply voltage: 1.8 V, 3.0 V

    ● Page size

    – x 8 device: (512 + 16 spare) bytes

    – x 16 device: (256 + 8 spare) words

    ● Block size

    – x 8 device: (16 K + 512 spare) bytes

    – x 16 device: (8 K + 256 spare) words

    ● Page Read/Program

    – Random access: 12 ?s (3 V)/15 ?s (1.8 V) (max)

    – Sequential access: 30 ns (3 V)/50 ns (1.8 V) (min)

    – Page Program time: 200 ?s (typ)

    ● Copy Back Program mode

    ● Fast Block Erase: 2 ms (typ)

    ● Status Register

    ● Electronic signature

    ● Chip Enable ‘don’t care’

    ● Serial Number option

    ● Hardware Data Protection

    – Program/Erase locked during Power transitions

    ● Data integrity

    – 100,000 Program/Erase cycles (with ECC)

    – 10 years Data Retention

    ● ECOPACK? packages

    ● Development tools

    – Error Correction Code models

    – Bad Blocks Management and Wear Leveling algorithms

    – Hardware simulation models

    NAND512R4A2CN6E供应商...

    更新时间:2025-3-24 8:30:00
    供应商 型号 品牌 批号 封装 库存 备注 价格
    深圳市中福国际管理有限公司
    NAND512R4M5AZB5F
    ST
    21+
    FBGA
    23480
    深圳市兴灿科技有限公司
    NAND512W2CN6E
    NUYX
    24+
    48TSOP
    2610
    原装现货
    贸泽芯城(深圳)电子科技有限公司
    NAND512W3A0AB6
    ST/意法
    23+
    20000
    原厂授权一级代理,专业海外优势订货,价格优势、品种
    深圳市益百分电子有限公司
    NAND512W3A0AN6
    ST
    04+
    TSOP48
    1570
    全新原装进口自己库存优势
    上海专毅电子科技有限公司
    NAND512W3A0AN6
    ST
    17+
    TSOP48
    9988
    只做原装进口,自己库存
    深圳诚思涵科技有限公司
    NAND512W3A0AN6
    STMicroelectronics
    18+
    ICFLASH512MBIT48TSOP
    6580
    公司原装现货
    深圳市近平电子有限公司
    NAND512W3A0AN6
    STM
    6000
    面议
    19
    DIP/SMD
    瀚佳科技(深圳)有限公司
    NAND512W3A0AN6
    STMicroelectronics
    24+
    48-TSOP
    56200
    一级代理/放心采购
    艾睿国际(香港)有限公司
    NAND512W3A0AN6
    SGS
    2447
    SMD
    100500
    一级代理专营品牌!原装正品,优势现货,长期排单到货
    深圳市科雨电子有限公司
    NAND512W3A0AN6
    STM
    20+
    TSOP-48
    1001
    就找我吧!--邀您体验愉快问购元件!

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    NUMONYX相关电路图

    • Nuvoton
    • NVE
    • NVENT
    • NVIDIA
    • nxp
    • NYLENE
    • O2Micro
    • ODU
    • OENINDIA
    • OHHALLSENSOR
    • OHMITE
    • OKAYA

    numonyx

    中文资料: 4589条

    Numonyx是一家曾经存在的存储技术公司,于2008年由英特尔(Intel)和STMicroelectronics共同创立。Numonyx专注于非易失性存储器(NVM)技术和闪存存储器技术,为客户提供各种存储解决方案和产品。 Numonyx的产品包括闪存存储器、嵌入式存储器、非易失性存储器等,在计算机、消费电子、通信、汽车等领域得到广泛应用。公司致力于技术创新与研发,不断提升产品性能、可靠性和创新性,以满足客户不断增长的需求。 2010年,美国存储技术公司Micron Technology收购了Numonyx,并将其整合为Micron的一部分。这一收购使Micron得以拓展其存储技术领域的产

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