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    Silicon Carbide (SiC) Module ¨C EliteSiC, 4 mohm SiC M3 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package with Si3N4 DBC

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    NXH004P120M3F2PTNGÊý¾ÝÊÖ²á¹æ¸ñÊéPDFÏêÇé

    The NXH004P120M3F2PTNG is a power module containing 3 m /

    1200 V SiC MOSFET half?bridge and a thermistor with Si3N4 DBC in

    an F2 package.

    Features

    ? 4 m / 1200 V M3S SiC MOSFET Half?Bridge

    ? Si3N4 DBC

    ? Thermistor

    ? Pre?Applied Thermal Interface Material (TIM)

    ? Press?Fit Pins

    ? These Devices are Pb?Free, Halide Free and are RoHS Compliant

    Typical Applications

    ? Solar Inverter

    ? Uninterruptible Power Supplies

    ? Electric Vehicle Charging Stations

    ? Industrial Power

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    NXH004P120M3F2PTNG ²úÆ·Ïà¹ØÐͺÅ

    • 06031F104J4U4A
    • 06031F104K4U2A
    • 1106616
    • 1122
    • 112288-12
    • 357-028-545-178
    • 880273
    • 892-074-524-201
    • 892-074-524-202
    • 892-074-524-203
    • 892-074-524-204
    • 892-074-524-207
    • 892-074-524-208
    • BCS00PY
    • C350C153D5G5TA7301
    • LM3209TLX-G3/NOPB
    • M2CEC
    • M2CEC-11001-M
    • M2CEC-11001-M/Q
    • M2CEC-11001-P
    • M2CEC-11001-R
    • MAX232EESE
    • PTSATAU
    • QPQ1289
    • QPQ3500
    • QPQ4900
    • QPQ6108
    • R75MI2820AA00K
    • UPC393

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