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Îļþ´óС | 2260.8Kbytes |
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¹¦ÄÜÃèÊö | Silicon Carbide (SiC) Module ¨C EliteSiC, 4 mohm SiC M3 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package with Si3N4 DBC |
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NXH004P120M3F2PTNGÊý¾ÝÊÖ²á¹æ¸ñÊéPDFÏêÇé
The NXH004P120M3F2PTNG is a power module containing 3 m /
1200 V SiC MOSFET half?bridge and a thermistor with Si3N4 DBC in
an F2 package.
Features
? 4 m / 1200 V M3S SiC MOSFET Half?Bridge
? Si3N4 DBC
? Thermistor
? Pre?Applied Thermal Interface Material (TIM)
? Press?Fit Pins
? These Devices are Pb?Free, Halide Free and are RoHS Compliant
Typical Applications
? Solar Inverter
? Uninterruptible Power Supplies
? Electric Vehicle Charging Stations
? Industrial Power
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PIM36 56.7x42.5 (PRESS FIT) |
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NXH004P120M3F2PTNG ²úÆ·Ïà¹ØÐͺÅ
- 06031F104J4U4A
- 06031F104K4U2A
- 1106616
- 1122
- 112288-12
- 357-028-545-178
- 880273
- 892-074-524-201
- 892-074-524-202
- 892-074-524-203
- 892-074-524-204
- 892-074-524-207
- 892-074-524-208
- BCS00PY
- C350C153D5G5TA7301
- LM3209TLX-G3/NOPB
- M2CEC
- M2CEC-11001-M
- M2CEC-11001-M/Q
- M2CEC-11001-P
- M2CEC-11001-R
- MAX232EESE
- PTSATAU
- QPQ1289
- QPQ3500
- QPQ4900
- QPQ6108
- R75MI2820AA00K
- UPC393
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