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General Description

Polyfets GAN (on SiC) HEMT power transistors contain no internal matching; making them suitable for both broadband and narrow band applications.

The use of a thermally enhanced package enables this device to have superior heat dissipation properties. The high drain break down voltage permits this device to operate over a wide voltage range.

RF POWER GAN TRANSISTOR

20.0 Watts Single Ended

Package Style G2

HIGH EFFICIENCY, LINEAR

HIGH GAIN, LOW NOISE

ROHS COMPLIANT

Suitable for use across 1-3000Mhz