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SST34HF1602C-70-4E-L1PE中文资料
SST34HF1602C-70-4E-L1PE数据手册规格书PDF详情
PRODUCT DESCRIPTION
The SST34HF16x2C/D/S ComboMemory devices integrate either a 1M x16 or 2M x8 CMOS flash memory bank with either a 128K x16/256K x8, 256K x16/512 x8, or 512K x16/1024K x8 CMOS SRAM or pseudo SRAM (PSRAM) memory bank in a multi-chip package (MCP). These devices are fabricated using SST’s proprietary, high-performance CMOS SuperFlash technology incorporating the split-gate cell design and thick-oxide tunneling injector to attain better reliability and manufacturability compared with alternate approaches. The SST34HF16x2C/D/S devices are ideal for applications such as cellular phones, GPS devices, PDAs, and other portable electronic devices in a low power and small form factor system.
FEATURES:
? Flash Organization: 1M x16 or 2M x8
? Dual-Bank Architecture for Concurrent Read/Write Operation
– 16 Mbit: 4 Mbit + 12 Mbit
? (P)SRAM Organization:
– 2 Mbit: 128K x16 or 256K x8
– 4 Mbit: 256K x16 or 512K x8
– 8 Mbit: 512K x16 or 1024K x8
? Single 2.7-3.3V Read and Write Operations
? Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
? Low Power Consumption:
– Active Current: 25 mA (typical)
– Standby Current: 20 ?A (typical)
? Hardware Sector Protection (WP#)
– Protects 4 outer most sectors (4 KWord) in the larger bank by holding WP# low and unprotects by holding WP# high
? Hardware Reset Pin (RST#)
– Resets the internal state machine to reading data array
? Byte Selection for Flash (CIOF pin)
– Selects 8-bit or 16-bit mode
? Sector-Erase Capability
– Uniform 2 KWord sectors
? Block-Erase Capability
– Uniform 32 KWord blocks
? Read Access Time
– Flash: 70 ns
– (P)SRAM: 70 ns
? Erase-Suspend / Erase-Resume Capabilities
? Security ID Feature
– SST: 128 bits
– User: 128 bits
? Latched Address and Data
? Fast Erase and Word-/Byte-Program (typical):
– Sector-Erase Time: 18 ms
– Block-Erase Time: 18 ms
– Chip-Erase Time: 35 ms
– Word-Program Time: 7 ?s
? Automatic Write Timing
– Internal VPP Generation
? End-of-Write Detection
– Toggle Bit
– Data# Polling
– Ready/Busy# pin
? CMOS I/O Compatibility
? JEDEC Standard Command Set
? Packages Available
– 56-ball LFBGA (8mm x 10mm)
– 62-ball LFBGA (8mm x 10mm)
SST34HF1602C-70-4E-L1PE产品属性
- 类型
描述
- 型号
SST34HF1602C-70-4E-L1PE
- 制造商
SST
- 制造商全称
Silicon Storage Technology, Inc
- 功能描述
16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory
SST34HF1602C-70-4E-L1PE供应商...
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
深圳市福田区绿盛电子商行 |
SST34HF1621 |
SST |
2015+ |
SOP/DIP |
19889 |
一级代理原装现货,特价热卖! |
|
深圳市昌和盛利电子有限公司 |
SST34HF1621-70-4E-LF |
SST |
23+ |
TFBGA |
19726 |
||
深圳市卓越微芯电子有限公司 |
SST34HF1621-70-4E-LF |
SST |
2020+ |
BGA |
6000 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|
深圳市壹芯创科技有限公司 |
SST34HF1621-70-4E-LF |
SST |
22+ |
PLCC-32 |
8000 |
原装现货库存.价格优势 |
|
深圳市恒达亿科技有限公司 |
SST34HF1621-70-4E-LF |
SST |
23+ |
BGA |
3000 |
全新原装、诚信经营、公司现货销售! |
|
深圳市宏捷佳电子科技有限公司 |
SST34HF1621-70-4E-LF |
SST |
2024+ |
BGA |
50000 |
原装现货 |
|
深圳市一线半导体有限公司 |
SST34HF1621-70-4E-LFP |
SST |
24+ |
TFBGA |
12000 |
||
深圳市富诚威科技有限公司 |
SST34HF1621-70-4E-LFP |
SST |
24+ |
BGA |
2978 |
100%全新原装公司现货供应!随时可发货 |
|
上海鑫科润电子科技有限公司 |
SST34HF1621-70-4E-LFP |
SST |
2001 |
TFBGA |
12000 |
原装现货海量库存欢迎咨询 |
|
瀚佳科技(深圳)有限公司 |
SST34HF1621-70-4E-LFP |
SST |
24+ |
BGA |
35200 |
一级代理/放心采购 |
SST34HF1602C-70-4E-L1PE 资料下载更多...
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Datasheet数据表PDF页码索引
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Silicon Storage Technology, Inc
Silicon Storage Technology, Inc. (SST)是SuperFlash?技术的创造者,这是一种创新、高度可靠和多功能的NOR闪存技术。SST是Microchip Technology Inc.的全资子公司,专注于向代工厂、集成器件制造商(IDMs)和无晶圆厂半导体公司授权嵌入式非易失性存储器(NVM)技术,以满足不断增长的汽车、安全智能卡、物联网(IoT)、人工智能(AI)、工业和消费市场中的应用需求。 SST拥有超过190名员工,办事处分布在美国、欧洲和亚洲,设有专门的工艺、设计、测试和可靠性团队,致力于与客户合作,轻松地将其独特、可靠且经过专利保护的技术集成到