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SST34HF1621-90-4E-LFP中文资料
SST34HF1621-90-4E-LFP数据手册规格书PDF详情
PRODUCT DESCRIPTION
The SST34HF1621/1641 ComboMemory devices integrate a 1M x16 CMOS flash memory bank with a 256K x8/128K x16 or 512K x8/ 256K x16 CMOS SRAM memory bank in a Multi-Chip Package (MCP). These devices are fabricated using SST’s proprietary, high-performance CMOS SuperFlash technology incorporating the split-gate cell design and thick oxide tunneling injector to attain better reliability and manufacturability compared with alternate approaches. The SST34HF1621/1641 devices are ideal for applications such as cellular phones, GPSs, PDAs and other portable electronic devices in a low power and small form factor system.
FEATURES:
? Flash Organization: 1M x16
? Dual-Bank Architecture for Concurrent Read/Write Operation
– 16 Mbit: 12 Mbit + 4 Mbit
? SRAM Organization:
– 2 Mbit: 256K x8 or 128K x16
– 4 Mbit: 512K x8 or 256K x16
? Single 2.7-3.3V Read and Write Operations
? Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
? Low Power Consumption:
– Active Current: 25 mA (typical)
– Standby Current: 20 ?A (typical)
? Hardware Sector Protection (WP#)
– Protects 4 outer most sectors (4 KWord) in the larger bank by holding WP# low and unprotects by holding WP# high
? Hardware Reset Pin (RST#)
– Resets the internal state machine to reading data array
? Sector-Erase Capability
– Uniform 1 KWord sectors
? Block-Erase Capability
– Uniform 32 KWord blocks
? Read Access Time
– Flash: 70 and 90 ns
– SRAM: 70 and 90 ns
? Latched Address and Data
? Fast Erase and Word-Program:
– Sector-Erase Time: 18 ms (typical)
– Block-Erase Time: 18 ms (typical)
– Chip-Erase Time: 70 ms (typical)
– Word-Program Time: 14 ?s (typical)
– Chip Rewrite Time: 8 seconds (typical)
? Automatic Write Timing
– Internal VPP Generation
? End-of-Write Detection
– Toggle Bit
– Data# Polling
– Ready/Busy# pin
? CMOS I/O Compatibility
? JEDEC Standard Command Set
? Conforms to Common Flash Memory Interface (CFI)
? Packages Available
– 56-ball LFBGA (8mm x 10mm)
SST34HF1621-90-4E-LFP产品属性
- 类型
描述
- 型号
SST34HF1621-90-4E-LFP
- 制造商
SST
- 制造商全称
Silicon Storage Technology, Inc
- 功能描述
16 Mbit Concurrent SuperFlash + 2/4 Mbit SRAM ComboMemory
SST34HF1621-90-4E-LFP供应商...
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
深圳市恒达亿科技有限公司 |
SST34HF1621A-70-4C-L |
SST |
23+ |
BGA |
3000 |
全新原装、诚信经营、公司现货销售! |
|
艾睿国际(香港)有限公司 |
SST34HF1621A-70-4C-LFP |
SST |
2447 |
BGA |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|
深圳市航润创能电子集团有限公司 |
SST34HF1621A-70-4C-LFP |
SST |
03+ |
BGA |
7000 |
||
深圳市威尔健半导体有限公司 |
SST34HF1621A-70-4C-LFP |
SST |
23+ |
BGA |
50000 |
全新原装正品现货,支持订货 |
|
京海半导体(深圳)有限公司 |
SST34HF1621A-70-4C-LFP |
SST |
21+ |
BGA |
10000 |
原装现货假一罚十 |
|
深圳廊盛科技有限公司 |
SST34HF1621A-70-4C-LFP |
SST |
2022 |
BGA |
80000 |
原装现货,OEM渠道,欢迎咨询 |
|
贸泽芯城(深圳)电子科技有限公司 |
SST34HF1621A-70-4C-LFP |
SST |
23+ |
BGA |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|
深圳市胜彬电子有限公司 |
SST34HF1621A-70-4C-LFP |
SST |
22+ |
BGA |
3000 |
原装正品,支持实单 |
|
深圳市得捷芯城科技有限公司 |
SST34HF1621A-70-4C-LFP |
SST |
23+ |
NA/ |
20 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|
深圳市中福国际管理有限公司 |
SST34HF1621A-70-4C-LFP |
SST |
20+ |
BGA |
7000 |
进口原装现货,假一赔十 |
SST34HF1621-90-4E-LFP 资料下载更多...
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Silicon Storage Technology, Inc
Silicon Storage Technology, Inc. (SST)是SuperFlash?技术的创造者,这是一种创新、高度可靠和多功能的NOR闪存技术。SST是Microchip Technology Inc.的全资子公司,专注于向代工厂、集成器件制造商(IDMs)和无晶圆厂半导体公司授权嵌入式非易失性存储器(NVM)技术,以满足不断增长的汽车、安全智能卡、物联网(IoT)、人工智能(AI)、工业和消费市场中的应用需求。 SST拥有超过190名员工,办事处分布在美国、欧洲和亚洲,设有专门的工艺、设计、测试和可靠性团队,致力于与客户合作,轻松地将其独特、可靠且经过专利保护的技术集成到