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SST34HF1621-90-4E-LFP中文资料

厂家型号

SST34HF1621-90-4E-LFP

文件大小

486.7Kbytes

页面数量

32

功能描述

16 Mbit Concurrent SuperFlash 2 / 4 Mbit SRAM ComboMemory

16 Mbit Concurrent SuperFlash + 2 / 4 Mbit SRAM ComboMemory

数据手册

下载地址一下载地址二

生产厂商

Silicon Storage Technology, Inc

简称

SST

中文名称

官网

LOGO

SST34HF1621-90-4E-LFP数据手册规格书PDF详情

PRODUCT DESCRIPTION

The SST34HF1621/1641 ComboMemory devices integrate a 1M x16 CMOS flash memory bank with a 256K x8/128K x16 or 512K x8/ 256K x16 CMOS SRAM memory bank in a Multi-Chip Package (MCP). These devices are fabricated using SST’s proprietary, high-performance CMOS SuperFlash technology incorporating the split-gate cell design and thick oxide tunneling injector to attain better reliability and manufacturability compared with alternate approaches. The SST34HF1621/1641 devices are ideal for applications such as cellular phones, GPSs, PDAs and other portable electronic devices in a low power and small form factor system.

FEATURES:

? Flash Organization: 1M x16

? Dual-Bank Architecture for Concurrent Read/Write Operation

– 16 Mbit: 12 Mbit + 4 Mbit

? SRAM Organization:

– 2 Mbit: 256K x8 or 128K x16

– 4 Mbit: 512K x8 or 256K x16

? Single 2.7-3.3V Read and Write Operations

? Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

? Low Power Consumption:

– Active Current: 25 mA (typical)

– Standby Current: 20 ?A (typical)

? Hardware Sector Protection (WP#)

– Protects 4 outer most sectors (4 KWord) in the larger bank by holding WP# low and unprotects by holding WP# high

? Hardware Reset Pin (RST#)

– Resets the internal state machine to reading data array

? Sector-Erase Capability

– Uniform 1 KWord sectors

? Block-Erase Capability

– Uniform 32 KWord blocks

? Read Access Time

– Flash: 70 and 90 ns

– SRAM: 70 and 90 ns

? Latched Address and Data

? Fast Erase and Word-Program:

– Sector-Erase Time: 18 ms (typical)

– Block-Erase Time: 18 ms (typical)

– Chip-Erase Time: 70 ms (typical)

– Word-Program Time: 14 ?s (typical)

– Chip Rewrite Time: 8 seconds (typical)

? Automatic Write Timing

– Internal VPP Generation

? End-of-Write Detection

– Toggle Bit

– Data# Polling

– Ready/Busy# pin

? CMOS I/O Compatibility

? JEDEC Standard Command Set

? Conforms to Common Flash Memory Interface (CFI)

? Packages Available

– 56-ball LFBGA (8mm x 10mm)

SST34HF1621-90-4E-LFP产品属性

  • 类型

    描述

  • 型号

    SST34HF1621-90-4E-LFP

  • 制造商

    SST

  • 制造商全称

    Silicon Storage Technology, Inc

  • 功能描述

    16 Mbit Concurrent SuperFlash + 2/4 Mbit SRAM ComboMemory

SST34HF1621-90-4E-LFP供应商...

更新时间:2025-3-23 16:38:00
供应商 型号 品牌 批号 封装 库存 备注 价格
深圳市恒达亿科技有限公司
SST34HF1621A-70-4C-L
SST
23+
BGA
3000
全新原装、诚信经营、公司现货销售!
艾睿国际(香港)有限公司
SST34HF1621A-70-4C-LFP
SST
2447
BGA
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
深圳市航润创能电子集团有限公司
SST34HF1621A-70-4C-LFP
SST
03+
BGA
7000
深圳市威尔健半导体有限公司
SST34HF1621A-70-4C-LFP
SST
23+
BGA
50000
全新原装正品现货,支持订货
京海半导体(深圳)有限公司
SST34HF1621A-70-4C-LFP
SST
21+
BGA
10000
原装现货假一罚十
深圳廊盛科技有限公司
SST34HF1621A-70-4C-LFP
SST
2022
BGA
80000
原装现货,OEM渠道,欢迎咨询
贸泽芯城(深圳)电子科技有限公司
SST34HF1621A-70-4C-LFP
SST
23+
BGA
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
深圳市胜彬电子有限公司
SST34HF1621A-70-4C-LFP
SST
22+
BGA
3000
原装正品,支持实单
深圳市得捷芯城科技有限公司
SST34HF1621A-70-4C-LFP
SST
23+
NA/
20
优势代理渠道,原装正品,可全系列订货开增值税票
深圳市中福国际管理有限公司
SST34HF1621A-70-4C-LFP
SST
20+
BGA
7000
进口原装现货,假一赔十

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SST相关电路图

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Silicon Storage Technology, Inc

中文资料: 7492条

Silicon Storage Technology, Inc. (SST)是SuperFlash?技术的创造者,这是一种创新、高度可靠和多功能的NOR闪存技术。SST是Microchip Technology Inc.的全资子公司,专注于向代工厂、集成器件制造商(IDMs)和无晶圆厂半导体公司授权嵌入式非易失性存储器(NVM)技术,以满足不断增长的汽车、安全智能卡、物联网(IoT)、人工智能(AI)、工业和消费市场中的应用需求。 SST拥有超过190名员工,办事处分布在美国、欧洲和亚洲,设有专门的工艺、设计、测试和可靠性团队,致力于与客户合作,轻松地将其独特、可靠且经过专利保护的技术集成到

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