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PRODUCT DESCRIPTION

The SST39LF/VF080 and SST39LF/VF016 devices are 1M x8 / 2M x8 CMOS Multi-Purpose Flash (MPF) manufactured with SST¡¯s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39LF080/016 write (Program or Erase) with a 3.0-3.6V power supply. The SST39VF080/016 write (Program or Erase) with a 2.7-3.6V power supply. They conform to JEDEC standard pinouts for x8 memories.

FEATURES:

? Organized as 1M x8 / 2M x8

? Single Voltage Read and Write Operations

¨C 3.0-3.6V for SST39LF080/016

¨C 2.7-3.6V for SST39VF080/016

? Superior Reliability

¨C Endurance: 100,000 Cycles (typical)

¨C Greater than 100 years Data Retention

? Low Power Consumption:

¨C Active Current: 15 mA (typical)

¨C Standby Current: 4 ?A (typical)

¨C Auto Low Power Mode: 4 ?A (typical)

? Sector-Erase Capability

¨C Uniform 4 KByte sectors

? Block-Erase Capability

¨C Uniform 64 KByte blocks

? Fast Read Access Time:

¨C 55 ns for SST39LF080/016

¨C 70 and 90 ns for SST39VF080/016

? Latched Address and Data

? Fast Erase and Byte-Program:

¨C Sector-Erase Time: 18 ms (typical)

¨C Block-Erase Time: 18 ms (typical)

¨C Chip-Erase Time: 70 ms (typical)

¨C Byte-Program Time: 14 ?s (typical)

¨C Chip Rewrite Time:

15 seconds (typical) for SST39LF/VF080

30 seconds (typical) for SST39LF/VF016

? Automatic Write Timing

¨C Internal VPP Generation

? End-of-Write Detection

¨C Toggle Bit

¨C Data# Polling

? CMOS I/O Compatibility

? JEDEC Standard

¨C Flash EEPROM Pinouts and command sets

? Packages Available

¨C 40-lead TSOP (10mm x 20mm)

¨C 48-ball TFBGA (6mm x 8mm)