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DESCRIPTION

The 74V2G08 is an advanced high-speed CMOS DUAL 2-INPUT AND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology.

The internal circuit is composed of 2 stages including buffer output, which provide high noise immunity and stable output.

Power down protection is provided on all inputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V.

■ HIGH SPEED: tPD = 3.8ns (TYP.) at VCC = 5V

■ LOW POWER DISSIPATION: ICC = 1?A(MAX.) at TA=25°C

■ HIGH NOISE IMMUNITY: VNIH = VNIL = 28 VCC (MIN.)

■ POWER DOWN PROTECTION ON INPUTS

■ SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 8mA (MIN) at VCC = 4.5V

■ BALANCED PROPAGATION DELAYS: tPLH ? tPHL

■ OPERATING VOLTAGE RANGE: VCC(OPR) = 2V to 5.5V

■ IMPROVED LATCH-UP IMMUNITY