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Description

The device is manufactured using high voltage

multi-epitaxial planar technology for high

switching speeds and medium voltage capability.

It uses a cellular emitter structure with planar

edge termination to enhance switching speeds

while maintaining the wide RBSOA.

The device is expressly designed for a new

solution to be used in compact fluorescent lamps,

where it is coupled with the BULT3N4, its

complementary NPN transistor.

Features

■ Low spread of dynamic parameters

■ Minimum lot-to-lot spread for reliable operation

■ Very high switching speed

Application

■ Electronic ballast for fluorescent lighting