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G60V60DF

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Trench gate field-stop IGBT, V series 600 V, 60 A very high speed

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STMicroelectronics

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Features

? Maximum junction temperature: TJ = 175 ¡ãC

? Tail-less switching off

? VCE(sat) = 1.85 V (typ.) @ IC = 60 A

? Tight parameter distribution

? Safe paralleling

? Low thermal resistance

? Very fast soft recovery antiparallel diode

Applications

? Photovoltaic inverters

? Uninterruptible power supply

? Welding

? Power factor correction

? Very high frequency converters

Description

These devices are IGBTs developed using an

advanced proprietary trench gate field-stop

structure. These devices are part of the V series

of IGBTs, which represents an optimum

compromise between conduction and switching

losses to maximize the efficiency of very high

frequency converters. Furthermore, a positive

VCE(sat) temperature coefficient and very tight

parameter distribution result in safer paralleling

operation.

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STMICROELECTRONICSÏà¹Øµç·ͼ

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