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DESCRIPTION

Each device is an electrically erasable program mable memory (EEPROM) fabricated with STMi croelectronics¡¯s High Endurance, Single Polysilicon, CMOS technology. This guarantees an endurance typically well above one million Erase/Write cycles, with a data retention of 40 years. The memory operates with a power supply as low as 2.5 V.

¡ö Two Wire I2C Serial Interface Supports 400 kHz Protocol

¡ö Single Supply Voltage (2.5 V to 5.5 V)

¡ö Hardware Write Control

¡ö BYTE and PAGE WRITE (up to 16 Bytes)

¡ö BYTE, RANDOM and SEQUENTIAL READ Modes

¡ö Self-Timed Programming Cycle

¡ö Automatic Address Incrementing

¡ö Enhanced ESD/Latch-Up Behaviour

¡ö 1 Million Erase/Write Cycles (minimum)

¡ö 40 Year Data Retention (minimum)

¡ö 5 ms Programming Time (typical)