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SUMMARY DESCRIPTION

The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An optional 12V VPP power supply is provided to speed up customer programming.

FEATURES SUMMARY

¡ö SUPPLY VOLTAGE

¨C VDD = 2.7V to 3.6V Core Power Supply

¨C VDDQ= 1.65V to 3.6V for Input/Output

¨C VPP = 12V for fast Program (optional)

¡ö ACCESS TIME: 70, 85, 90,100ns

¡ö PROGRAMMING TIME:

¨C 10?s typical

¨C Double Word Programming Option

¨C Quadruple Word Programming Option

¡ö COMMON FLASH INTERFACE

¡ö MEMORY BLOCKS

¨C Parameter Blocks (Top or Bottom location)

¨C Main Blocks

¡ö BLOCK LOCKING

¨C All blocks locked at Power Up

¨C Any combination of blocks can be locked

¨C WP for Block Lock-Down

¡ö SECURITY

¨C 128 bit user Programmable OTP cells

¨C 64 bit unique device identifier

¡ö AUTOMATIC STAND-BY MODE

¡ö PROGRAM and ERASE SUSPEND

¡ö 100,000 PROGRAM/ERASE CYCLES per BLOCK

¡ö ELECTRONIC SIGNATURE

¨C Manufacturer Code: 20h

¨C Top Device Code, M28W640ECT: 8848h

¨C Bottom Device Code, M28W640ECB: 8849h