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SUMMARY DESCRIPTION

The M28W800B is a 8 Mbit (512Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/O pin down to 1.65V. An optional 12V VPP power supply is provided to speed up customer programming.

FEATURES SUMMARY

¡ö SUPPLY VOLTAGE

¨C VDD = 2.7V to 3.6V Core Power Supply

¨C VDDQ= 1.65V to 3.6V for Input/Output

¨C VPP = 12V for fast Program (optional)

¡ö ACCESS TIME: 70, 85, 90,100ns

¡ö PROGRAMMING TIME

¨C 10?s typical

¨C Double Word Programming Option

¡ö COMMON FLASH INTERFACE

¨C 64 bit Security Code

¡ö MEMORY BLOCKS

¨C Parameter Blocks (Top or Bottom location)

¨C Main Blocks

¡ö BLOCK PROTECTION on TWO PARAMETER BLOCKS

¨C WP for Block Protection

¡ö AUTOMATIC STAND-BY MODE

¡ö PROGRAM and ERASE SUSPEND

¡ö 100,000 PROGRAM/ERASE CYCLES per BLOCK

¡ö ELECTRONIC SIGNATURE

¨C Manufacturer Code: 20h

¨C Top Device Code, M28W800BT: 8892h

¨C Bottom Device Code, M28W800BB: 8893h