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SUMMARY DESCRIPTION

The M29DW324D is a 32 Mbit (4Mb x8 or 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.

FEATURES SUMMARY

¡ö SUPPLY VOLTAGE

¨C VCC = 2.7V to 3.6V for Program, Erase and Read

¨C VPP =12V for Fast Program (optional)

¡ö ACCESS TIME: 70, 90ns

¡ö PROGRAMMING TIME

¨C 10?s per Byte/Word typical

¨C Double Word/ Quadruple Byte Program

¡ö MEMORY BLOCKS

¨C Dual Bank Memory Array: 16Mbit+16Mbit

¨C Parameter Blocks (Top or Bottom Location)

¡ö DUAL OPERATIONS

¨C Read in one bank while Program or Erase in other

¡ö ERASE SUSPEND and RESUME MODES

¨C Read and Program another Block during Erase Suspend

¡ö UNLOCK BYPASS PROGRAM COMMAND

¨C Faster Production/Batch Programming

¡ö VPP/WP PIN for FAST PROGRAM and WRITE PROTECT

¡ö TEMPORARY BLOCK UNPROTECTION MODE

¡ö COMMON FLASH INTERFACE

¨C 64 bit Security Code

¡ö EXTENDED MEMORY BLOCK

¨C Extra block used as security block or to store additional information

¡ö LOW POWER CONSUMPTION

¨C Standby and Automatic Standby

¡ö 100,000 PROGRAM/ERASE CYCLES per BLOCK

¡ö ELECTRONIC SIGNATURE

¨C Manufacturer Code: 0020h

¨C Top Device Code M29DW324DT: 225Ch

¨C Bottom Device Code M29DW324DB: 225Dh