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DESCRIPTION

The M29F040 is a non-volatile memory that may be erased electrically at the block level, and programmed Byte-by-Byte.

¡ö M29F040 is replaced by the M29F040B

¡ö 5V ¡À 10 SUPPLY VOLTAGE for PROGRAM,

ERASE and READ OPERATIONS

¡ö FAST ACCESS TIME: 70ns

¡ö BYTE PROGRAMMING TIME: 10?s typical

¡ö ERASE TIME

¨C Block: 1.0 sec typical

¨C Chip: 2.5 sec typical

¡ö PROGRAM/ERASE CONTROLLER (P/E.C.)

¨C Program Byte-by-Byte

¨C Data Polling and Toggle bits Protocol for

P/E.C. Status

¡ö MEMORY ERASE in BLOCKS

¨C 8 Uniform Blocks of 64 KBytes each

¨C Block Protection

¨C Multiblock Erase

¡ö ERASE SUSPEND and RESUME MODES

¡ö LOW POWER CONSUMPTION

¨C Read mode: 8mA typical (at 12MHz)

¨C Stand-by mode: 25?A typical

¨C Automatic Stand-by mode

¡ö 100,000 PROGRAM/ERASE CYCLES per

BLOCK

¡ö 20 YEARS DATA RETENTION

¨C Defectivity below 1ppm/year

¡ö ELECTRONIC SIGNATURE

¨C Manufacturer Code: 20h

¨C Device Code: E2h