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M29F040B70N6T中文资料
M29F040B70N6T数据手册规格书PDF详情
SUMMARY DESCRIPTION
The M29F040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed us ing a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29F040B is fully backward compatible with the M29F040.
The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Each block can be protected independently to prevent accidental Program or Erase commands from modifying the memory. Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.
Chip Enable, Output Enable and Write Enable signals control the bus operation of the memory.
They allow simple connection to most microprocessors, often without additional logic.
The memory is offered in TSOP32 (8 x 20mm), PLCC32 and PDIP32 packages and it is supplied with all the bits erased (set to ‘1’).
■ SINGLE 5V ± 10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS
■ ACCESS TIME: 45ns
■ PROGRAMMING TIME
– 8 ?s per Byte typical
■ 8 UNIFORM 64 Kbytes MEMORY BLOCKS
■ PROGRAM/ERASE CONTROLLER
– Embedded Byte Program algorithm
– Embedded Multi-Block/Chip Erase algorithm
– Status Register Polling and Toggle Bits
■ ERASE SUSPEND and RESUME MODES
– Read and Program another Block during Erase Suspend
■ UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
■ LOW POWER CONSUMPTION
– Standby and Automatic Standby
■ 100,000 PROGRAM/ERASE CYCLES per BLOCK
■ 20 YEARS DATA RETENTION
– Defectivity below 1 ppm/year
■ ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: E2h
M29F040B70N6T产品属性
- 类型
描述
- 型号
M29F040B70N6T
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
4 Mbit(512Kb x8, Uniform Block) Single Supply Flash Memory
M29F040B70N6T供应商...
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
深圳市一线半导体有限公司 |
M29F040B70P1 |
ST |
24+ |
DIP |
200 |
||
深圳市信佳源电子有限公司 |
M29F040B70P1 |
ST/意法 |
02+ |
DIP |
21 |
原装/现货 |
|
深圳市昂芯微科技有限公司 |
M29F040B70P1 |
ST |
23+ |
DIP |
8678 |
原厂原装 |
|
深圳市盈盛科创科技有限公司 |
M29F040B70P1 |
ST/意法 |
22+ |
DIP |
6000 |
进口原装 假一罚十 现货 |
|
深圳廊盛科技有限公司 |
M29F040B70P1 |
ST/意法 |
22+ |
DIP |
50000 |
只做原装正品,假一罚十,欢迎咨询 |
|
深圳市东来宝电子科技有限公司 |
M29F040B70P1 |
ST/意法 |
22+ |
BGA |
25833 |
郑重承诺只做原装进口货 |
|
深圳市晨豪科技有限公司 |
M29F040B70P1 |
ST/意法 |
23+ |
DIP |
89630 |
当天发货全新原装现货 |
|
深圳市明嘉莱科技有限公司 |
M29F040B70P1 |
ST/意法 |
25+ |
DIP |
880000 |
明嘉莱只做原装正品现货 |
|
深圳市中远芯科技有限公司 |
M29F040B70P1 |
ST/意法 |
02+ |
DIP |
21 |
原装现货 |
|
深圳市中福国际管理有限公司 |
M29F040B70P1 |
ST |
21+ |
DIP |
23480 |
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STMicroelectronics 意法半导体集团
意法半导体 (STMicroelectronics) 成立于1987年,总部位于瑞士日内瓦和法国巴黎,是一家全球领先的半导体公司。意法半导体专注于设计、制造和销售各种半导体解决方案,产品广泛应用于汽车、工业、消费电子、通信等领域。 意法半导体的产品包括微控制器、模拟集成电路、功率半导体、传感器等。公司拥有多个研发中心和生产基地,致力于技术创新和研发投入。意法半导体在全球范围内拥有广泛的客户群和合作伙伴,为客户提供高品质的产品和解决方案。 公司的使命是通过半导体技术推动智能化和可持续发展,助力客户取得成功。意法半导体不仅注重商业成功,还注重社会责任、环境保护和可持续经营。企业价值观包括创新、尊重