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DESCRIPTION

The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed in standard programmers.

¡ö 5V ¡À 10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS

¡ö FAST ACCESS TIME: 70ns

¡ö FAST PROGRAMMING TIME

¨C 10?s by Byte / 16?s by Word typical

¡ö PROGRAM/ERASE CONTROLLER (P/E.C.)

¨C Program Byte-by-Byte or Word-by-Word

¨C Status Register bits and Ready/Busy Output

¡ö MEMORY BLOCKS

¨C Boot Block (Top or Bottom location)

¨C Parameter and Main blocks

¡ö BLOCK, MULTI-BLOCK and CHIP ERASE

¡ö MULTI-BLOCK PROTECTION/TEMPORARY UNPROTECTION MODES

¡ö ERASE SUSPEND and RESUME MODES

¨C Read and Program another Block during Erase Suspend

¡ö LOW POWER CONSUMPTION

¨C Stand-byand Automatic Stand-by

¡ö 100,000 PROGRAM/ERASE CYCLES per BLOCK

¡ö 20 YEARS DATARETENTION

¨C Defectivity below 1ppm/year

¡ö ELECTRONIC SIGNATURE

¨C ManufacturerCode: 0020h

¨C Device Code, M29F100T: 00D0h

¨C Device Code, M29F100B: 00D1h