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SUMMARY DESCRIPTION

The M29F100B is a 1 Mbit (128Kb x8 or 64Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29F100B is fully backward compatible with the M29F100.

¡ö SINGLE 5V¡À10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS

¡ö ACCESS TIME: 45ns

¡ö PROGRAMMING TIME

¨C 8?s per Byte/Word typical

¡ö 5 MEMORY BLOCKS

¨C 1 Boot Block (Top or Bottom Location)

¨C 2 Parameter and 2 Main Blocks

¡ö PROGRAM/ERASE CONTROLLER

¨C Embedded Byte/Word Program algorithm

¨C Embedded Multi-Block/Chip Erase algorithm

¨C Status Register Polling and Toggle Bits

¨C Ready/Busy Output Pin

¡ö ERASE SUSPEND and RESUME MODES

¨C Read and Program another Block during Erase Suspend

¡ö UNLOCK BYPASS PROGRAM COMMAND

¨C Faster Production/Batch Programming

¡ö TEMPORARY BLOCK UNPROTECTION MODE

¡ö LOW POWER CONSUMPTION

¨C Standby and Automatic Standby

¡ö 100,000 PROGRAM/ERASE CYCLES per BLOCK

¡ö 20 YEARS DATA RETENTION

¨C Defectivity below 1 ppm/year

¡ö ELECTRONIC SIGNATURE

¨C Manufacturer Code: 0020h

¨C Top Device Code M29F100BT: 00D0h

¨C Bottom Device Code M29F100BB: 00D1h