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DESCRIPTION

The M29W004 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed in standard programmers.

¡ö M29W004T and M29W004B are replaced respectively by the M29W004BT and M29W004BB

¡ö 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS

¡ö FAST ACCESS TIME: 100ns

¡ö FAST PROGRAMMING TIME: 10?s typical

¡ö PROGRAM/ERASE CONTROLLER (P/E.C.)

¨C Program Byte-by-Byte

¨C Status Register bits and Ready/Busy Output

¡ö MEMORY BLOCKS

¨C Boot Block (Top or Bottom location)

¨C Parameter and Main blocks

¡ö BLOCK, MULTI-BLOCK and CHIP ERASE

¡ö MULTI BLOCK PROTECTION/TEMPORARY UNPROTECTION MODES

¡ö ERASE SUSPEND and RESUME MODES

¨C Read and Program another Block during Erase Suspend

¡ö LOW POWER CONSUMPTION

¨C Stand-by and Automatic Stand-by

¡ö 100,000 PROGRAM/ERASE CYCLES per BLOCK

¡ö 20 YEARS DATA RETENTION

¨C Defectivity below 1ppm/year

¡ö ELECTRONIC SIGNATURE

¨C Manufacturer Code: 20h

¨C Device Code, M29W004T: EAh

¨C Device Code, M29W004B: EBh