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SUMMARY DESCRIPTION

The M29W004B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29W004B is fully backward compatible with the M29W004.

¡ö SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS

¡ö ACCESS TIME: 55ns

¡ö PROGRAMMING TIME

¨C 10?s by Byte typical

¡ö 11 MEMORY BLOCKS

¨C 1 Boot Block (Top or Bottom Location)

¨C 2 Parameter and 8 Main Blocks

¡ö PROGRAM/ERASE CONTROLLER

¨C Embedded Byte Program algorithm

¨C Embedded Multi-Block/Chip Erase algorithm

¨C Status Register Polling and Toggle Bits

¨C Ready/Busy Output Pin

¡ö ERASE SUSPEND and RESUME MODES

¨C Read and Program another Block during Erase Suspend

¡ö TEMPORARY BLOCK UNPROTECTION MODE

¡ö UNLOCK BYPASS PROGRAM COMMAND

¨C Faster Production/Batch Programming

¡ö LOW POWER CONSUMPTION

¨C Standby and Automatic Standby

¡ö 100,000 PROGRAM/ERASE CYCLES per BLOCK

¡ö 20 YEARS DATA RETENTION

¨C Defectivity below 1 ppm/year

¡ö ELECTRONIC SIGNATURE

¨C Manufacturer Code: 20h

¨C Top Device Code M29W004BT: EAh

¨C Bottom Device Code M29W004BB: EBh