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DESCRIPTION

The M29W800A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word-by-Word basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed in standard programmers.

FEATURES SUMMARY

¡ö 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS

¡ö ACCESS TIME: 80ns

¡ö PROGRAMMING TIME: 10?s typical

¡ö PROGRAM/ERASE CONTROLLER (P/E.C.)

¨C Program Byte-by-Byte or Word-by-Word

¨C Status Register bits and Ready/Busy Output

¡ö SECURITY PROTECTION MEMORY AREA

¡ö INSTRUCTION ADDRESS CODING: 3 digits

¡ö MEMORY BLOCKS

¨C Boot Block (Top or Bottom location)

¨C Parameter and Main blocks

¡ö BLOCK, MULTI-BLOCK and CHIP ERASE

¡ö MULTI BLOCK PROTECTION/TEMPORARY UNPROTECTION MODES

¡ö ERASE SUSPEND and RESUME MODES

¨C Read and Program another Block during Erase Suspend

¡ö LOW POWER CONSUMPTION

¨C Stand-by and Automatic Stand-by

¡ö 100,000 PROGRAM/ERASE CYCLES per BLOCK

¡ö 20 YEARS DATA RETENTION

¨C Defectivity below 1ppm/year

¡ö ELECTRONIC SIGNATURE

¨C Manufacturer Code: 20h

¨C Top Device Code, M29W800AT: D7h

¨C Bottom Device Code, M29W800AB: 5Bh