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Îļþ´óС | 346.99Kbytes |
Ò³ÃæÊýÁ¿ | 18Ò³ |
¹¦ÄÜÃèÊö | 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package 64 Mbit(4Mb x16, Multiple Bank, Burst) Flash Memory and 16 Mbit(1Mb x16) PSRAM, Multi-Chip Package |
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M36W0R6040T0Êý¾ÝÊÖ²á¹æ¸ñÊéPDFÏêÇé
SUMMARY DESCRIPTION
The M36W0R6040T0 and M36W0R6040B0 are Multiple Memory Products which combine two memory devices; a 64-Mbit, Multiple Bank Flash memories, the M58WR064FT/B, and a 16-Mbit Pseudo SRAM, the M69AR024B. Recommended operating conditions do not allow more than one memory to be active at the same time. The memory is offered in a Stacked TFBGA88 (8x10mm, 8x10 ball array, 0.8mm pitch) package.
In addition to the standard version, the packages are also available in Lead-free version, in compliance with JEDEC Std J-STD-020B, the ST ECO PACK 7191395 Specification, and the RoHS (Restriction of Hazardous Substances) directive.
All packages are compliant with Lead-free soldering processes.
FEATURES SUMMARY
¡ö MULTI-CHIP PACKAGE
¨C 1 die of 64 Mbit (4Mb x 16) Flash Memory
¨C 1 die of 16 Mbit (1Mb x 16) Pseudo SRAM
¡ö SUPPLY VOLTAGE
¨C VDDF = VDDP = VDDQ = 1.7V to 1.95V
¡ö LOW POWER CONSUMPTION
¡ö ELECTRONIC SIGNATURE
¨C Manufacturer Code: 20h
¨C Device Code (Top Flash Configuration), M36W0R6040T0: 8810h
¨C Device Code (Bottom Flash Configuration), M36W0R6040B0: 8811h
¡ö PACKAGES
¨C Compliant with Lead-Free Soldering Processes
¨C Lead-Free Versions
FLASH MEMORY
¡ö PROGRAMMING TIME
¨C 8?s by Word typical for Fast Factory Program
¨C Double/Quadruple Word Program option
¨C Enhanced Factory Program options
¡ö MEMORY BLOCKS
¨C Multiple Bank Memory Array: 4 Mbit Banks
¨C Parameter Blocks (Top location)
¡ö SYNCHRONOUS / ASYNCHRONOUS READ
¨C Synchronous Burst Read mode: 66MHz
¨C Asynchronous/ Synchronous Page Read mode
¨C Random Access: 70ns
¡ö DUAL OPERATIONS
¨C Program Erase in one Bank while Read in others
¨C No delay between Read and Write operations
¡ö BLOCK LOCKING
¨C All blocks locked at Power-up
¨C Any combination of blocks can be locked
¨C WPF for Block Lock-Down
¡ö SECURITY
¨C 128-bit user programmable OTP cells
¨C 64-bit unique device number
¡ö COMMON FLASH INTERFACE (CFI)
¡ö 100,000 PROGRAM/ERASE CYCLES per BLOCK
PSRAM
¡ö ACCESS TIME: 70ns
¡ö LOW STANDBY CURRENT: 110?A
¡ö DEEP POWER DOWN CURRENT: 10?A
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64 Mbit(4Mb x16, Multiple Bank, Burst) Flash Memory and 16 Mbit(1Mb x16) PSRAM, Multi-Chip Package
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M36W0R6040T0 ²úÆ·Ïà¹ØÐͺÅ
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