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SUMMARY DESCRIPTION

The M36WT864 is a low voltage Multiple Memory Product which combines two memory devices; a 64 Mbit Multiple Bank Flash memory and an 8 Mbit SRAM. Recommended operating conditions do not allow both the Flash and the SRAM to be active at the same time.

The memory is offered in a Stacked LFBGA96 (8 x 14mm, 0.8 mm pitch) package and is supplied with all the bits erased (set to ¡®1¡¯).

FEATURES SUMMARY

¡ö SUPPLY VOLTAGE

¨C VDDF = 1.65V to 2.2V

¨C VDDS = VDDQF = 2.7V to 3.3V

¨C VPPF = 12V for Fast Program (optional)

¡ö ACCESS TIME: 70, 85, 100ns

¡ö LOW POWER CONSUMPTION

¡ö ELECTRONIC SIGNATURE

¨C Manufacturer Code: 20h

¨C Top Device Code, M36WT864TF: 8810h

¨C Bottom Device Code, M36WT864BF: 8811h

FLASH MEMORY

¡ö PROGRAMMING TIME

¨C 8?s by Word typical for Fast Factory Program

¨C Double/Quadruple Word Program option

¨C Enhanced Factory Program options

¡ö MEMORY BLOCKS

¨C Multiple Bank Memory Array: 4 Mbit Banks

¨C Parameter Blocks (Top or Bottom location)

¡ö DUAL OPERATIONS

¨C Program Erase in one Bank while Read in others

¨C No delay between Read and Write operations

¡ö BLOCK LOCKING

¨C All blocks locked at Power up

¨C Any combination of blocks can be locked

¨C WP for Block Lock-Down

¡ö SECURITY

¨C 128 bit user programmable OTP cells

¨C 64 bit unique device number

¨C One parameter block permanently lockable

¡ö COMMON FLASH INTERFACE (CFI)

¡ö 100,000 PROGRAM/ERASE CYCLES per BLOCK

SRAM

¡ö 8 Mbit (512K x 16 bit)

¡ö EQUAL CYCLE and ACCESS TIMES: 70ns

¡ö LOW STANDBY CURRENT

¡ö LOW VDDS DATA RETENTION: 1.5V

¡ö TRI-STATE COMMON I/O

¡ö AUTOMATIC POWER DOWN