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Features

? 600 V system-in-package integrating half-bridge gate driver and high-voltage

GaN power transistors:

– QFN 9 x 9 x 1 mm package

– RDS(ON) = 225 m?

– IDS(MAX) = 6.5 A

? Reverse current capability

? Zero reverse recovery loss

? UVLO protection on low-side and high-side

? Internal bootstrap diode

? Interlocking function

? Dedicated pin for shutdown functionality

? Accurate internal timing match

? 3.3 V to 15 V compatible inputs with hysteresis and pull-down

? Overtemperature protection

? Bill of material reduction

? Very compact and simplified layout

? Flexible, easy and fast design.

Application

? Switch-mode power supplies

? Chargers and adapters

? High-voltage PFC, DC-DC and DC-AC converters