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General features

■ LOWER ON-VOLTAGE DROP (Vcesat)

■ LOWER CRES / CIES RATIO (NO

CROSS-CONDUCTION SUSCEPTIBILITY)

■ VERY SOFT ULTRA FAST RECOVERY

ANTIPARALLEL DIODE

Description

Using the latest high voltage technology based on

a patented strip layout, STMicroelectronics has

designed an advanced family of IGBTs, the

PowerMESH? IGBTs, with outstanding

performances. The suffix H identifies a family

optimized for high frequency applications in order

to achieve very high switching performances

(reduced tfall) mantaining a low voltage drop.

Applications

■ HIGH FREQUENCY MOTOR CONTROLS

■ SMPS and PFC IN BOTH HARD SWITCH

AND RESONANT TOPOLOGIES

■ MOTOR DRIVERS