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Description

The is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7.5 V in common source mode at frequencies of up to 1 GHz. boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in leadless SMD plastic RF power package , PowerFLAT?.

Features

■ Excellent thermal stability

■ Common source configuration

■ POUT = 8 W with 13 dB gain @ 870 MHz / 7.5 V

■ Plastic package

■ ESD protection

■ In compliance with the 2002/95/EC european directive