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Features

? AEC-Q101 qualified

? Maximum junction temperature: TJ = 175 °C

? 6 μs of minimum short-circuit withstand time

? VCE(sat) = 1.6 V (typ.) @ IC = 30 A

? Tight parameter distribution

? Safer paralleling

? Low thermal resistance

? Soft and very fast-recovery antiparallel diode

? Excellent switching performance thanks to the extra driving kelvin pin

Applications

? Automotive motor control

? e-compressor

? Industrial motor control

? Power supplies and converters

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal

balance between inverter system performance and efficiency where the low-loss and

the short-circuit functionality is essential. Furthermore, the positive VCE(sat)

temperature coefficient and the tight parameter distribution result in safer paralleling

operation.